5秒后页面跳转
捷配首页

Datasheet > MZP4730ATA
MZP4730ATA PDF预览

MZP4730ATA

更新时间： 2024-02-12 22:19:40
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 测试二极管
页数 文件大小 规格书
10页 156K
描述
3.9V, 3W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41

阅读下载

获取价格

MZP4730ATA 技术参数

生命周期：Obsolete包装说明：O-PALF-W2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.84
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：ZENER DIODE
JEDEC-95代码：DO-41JESD-30 代码：O-PALF-W2
膝阻抗最大值：400 Ω元件数量：1
端子数量：2最高工作温度：200 °C
最低工作温度：-65 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
极性：UNIDIRECTIONAL最大功率耗散：3 W
认证状态：Not Qualified标称参考电压：3.9 V
最大反向电流：50 µA表面贴装：NO
技术：ZENER端子形式：WIRE
端子位置：AXIAL最大电压容差：5%
工作测试电流：64 mABase Number Matches：1

MZP4730ATA 数据手册

 浏览型号MZP4730ATA的Datasheet PDF文件第1页浏览型号MZP4730ATA的Datasheet PDF文件第3页浏览型号MZP4730ATA的Datasheet PDF文件第4页浏览型号MZP4730ATA的Datasheet PDF文件第5页浏览型号MZP4730ATA的Datasheet PDF文件第6页浏览型号MZP4730ATA的Datasheet PDF文件第7页 
GENERAL DATA — 1-3 WATT DO-41 SURMETIC 30  
30  
20  
D =0.5  
0.2  
10  
7
5
0.1  
3
2
t
P
1
PK  
0.05  
t
2
DUTY CYCLE, D =t /t  
0.02  
0.01  
1 2  
1
0.7  
0.5  
NOTE: BELOW 0.1 SECOND, THERMAL  
RESPONSE CURVE IS APPLICABLE  
TO ANY LEAD LENGTH (L).  
SINGLE PULSE  
∆
T
=
∆
θ
T
(t)P  
JL  
JL  
JL  
PK  
REPETITIVE PULSES  
=
θ
(t,D)P  
D = 0  
JL  
PK  
0.3  
0.0001 0.0002  
0.0005  
0.001  
0.002  
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
1
2
5
10  
t, TIME (SECONDS)  
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch  
3
1K  
2
RECTANGULAR  
NONREPETITIVE  
1
0.5  
500  
T = 125°C  
A
WAVEFORM  
300  
200  
T
= 25°C PRIOR  
J
0.2  
0.1  
TO INITIAL PULSE  
0.05  
100  
0.02  
0.01  
0.005  
50  
30  
20  
T
= 125°C  
0.002  
0.001  
A
0.0005  
0.0003  
10  
1
2
5
10  
20  
50  
100 200  
400  
1000  
0.1  
0.2 0.3 0.5  
1
2
3
5
10  
20 30 50 100  
NOMINAL V (VOLTS)  
Z
PW, PULSE WIDTH (ms)  
Figure 3. Maximum Surge Power  
Figure 4. Typical Reverse Leakage  
APPLICATION NOTE  
Since the actual voltage available from a given zener diode  
is temperature dependent, it is necessary to determine junc-  
tiontemperatureunderanysetofoperatingconditionsinorder  
to calculate its value. The following procedure is recom-  
mended:  
∆T is the increase in junction temperature above the lead  
temperature and may be found from Figure 2 for a train of  
power pulses (L = 3/8 inch) or from Figure 10 for dc power.  
JL  
∆T = θ  
JL  
P
D
JL  
For worst-case design, using expected limits of I , limits of  
Z
Lead Temperature, T , should be determined from:  
L
P
and the extremes of T (∆T ) may be estimated. Changes  
D
J J  
T = θ  
L
P
D
+ T  
A
LA  
in voltage, V , can then be found from:  
Z
θ
P
is the lead-to-ambient thermal resistance (°C/W) and  
LA  
D
∆V = θ  
∆T  
J
VZ  
is the power dissipation. The value for θ will vary and  
LA  
LA  
depends on the device mounting method. θ  
30–40°C/W for the various clips and tie points in common  
is generally  
θ
,thezenervoltagetemperaturecoefficient,isfoundfrom  
VZ  
Figures 5 and 6.  
use and for printed circuit board wiring.  
Under high power-pulse operation, the zener voltage will  
vary with time and may also be affected significantly by the  
zenerresistance. Forbestregulation, keepcurrentexcursions  
as low as possible.  
Data of Figure 2 should not be used to compute surge capa-  
bility. Surge limitations are given in Figure 3. They are lower  
than would be expected by considering only junction tempera-  
ture, as current crowding effects cause temperatures to be ex-  
tremely high in small spots resulting in device degradation  
should the limits of Figure 3 be exceeded.  
The temperature of the lead can also be measured using a  
thermocoupleplacedontheleadascloseaspossibletothetie  
point. The thermal mass connected to the tie point is normally  
large enough so that it will not significantly respond to heat  
surges generated in the diode as a result of pulsed operation  
once steady-state conditions are achieved. Using the mea-  
sured value of T , the junction temperature may be deter-  
L
mined by:  
T = T + ∆T  
JL  
J
L
Motorola TVS/Zener Device Data  
1–3 Watt DO-41 Surmetic 30 Data Sheet  
6-44  
1234567...10

下载PDF

与MZP4730ATA相关器件

型号 品牌 描述 获取价格 数据表
MZP4731 MOTOROLA 1.0 WATT SURMETIC 30 SILICON ZENER DIODES

获取价格
MZP4731A MOTOROLA 暂无描述

获取价格
MZP4731ARL MOTOROLA Zener Diode, 4.3V V(Z), 5%, 3W, Silicon, Unidirectional, DO-41

获取价格
MZP4731ATA MOTOROLA Zener Diode, 4.3V V(Z), 5%, 3W, Silicon, Unidirectional, DO-41

获取价格
MZP4731C MOTOROLA 暂无描述

获取价格
MZP4731D MOTOROLA Zener Diode, 4.3V V(Z), 1%, 1W,

获取价格

与MZP4730ATA相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证