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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| MXLP4KE12E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode |
|
| MXLP4KE130 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode |
|
| MXLP4KE130A | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO- |
|
| MXLP4KE130AE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO- |
|
| MXLP4KE130ATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO- |
|
| MXLP4KE130C | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode |
|
| MXLP4KE130CA | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 |
|
| MXLP4KE130CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 |
|
| MXLP4KE130CATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 |
|
| MXLP4KE130CE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode |
|
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英特尔震撼发布：128核心256线程的至强6性能核处理器
SK海力士量产12层HBM3E，容量高达36GB
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