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MV21002

更新时间： 2025-08-10 05:51:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管变容二极管
页数	文件大小	规格书
2页	149K
描述
GaAs Varactor Diodes Abrupt Junction

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MV21002 数据手册

GaAs Varactor Diodes

Abrupt Junction

MV20001 – MV21010

Features

●

High Q Values for Higher Frequency Performance

●

Constant Gamma Design

Low Reverse Current

Available as Chip or Packaged Diodes

Available in Chip-on-Board Packaging

Custom Designs Available

Applications

●

VCOs

●

Phase-Locked Oscillators

Description

●

High Q Tunable Filters

Microsemi’s GaAs abrupt junction varactors are

fabricated from epitaxial layers grown at

Microsemi using Chemical Vapor Deposition. The

layers are processed using proprietary techniques

resulting in a high Q factor and very repeatable

tuning curves. The diodes are available in a variety

of microwave ceramic packages or chips for

operation from UHF to millimeter wave

frequencies.

●

Phase Shifters

●

Pre-Selectors

Maximum Ratings

Reverse

oltage

Breakdown

50 mA 25°C

+20 dBm 25°C

Voltage

Forward Current

Incident Power

Operating

emperature

-55°C to +175°C

-55°C to +200°C

Storage emperature

IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com

Specifications are subject to change. Consult factory for the latest information.

¹The MV20000 Series of products are

supplied with a RoHS complaint Gold finish

These devices are ESD sensitive and must be handled using ESD precautions.

Microsemi

Rev: 2009-05-11

Page 1

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

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MV21003	MICROSEMI	获取价格	GaAs Varactor Diodes Abrupt Junction
MV21004	MICROSEMI	获取价格	GaAs Varactor Diodes Abrupt Junction
MV21005	MICROSEMI	获取价格	GaAs Varactor Diodes Abrupt Junction
MV21006	MICROSEMI	获取价格	GaAs Varactor Diodes Abrupt Junction
MV21007	MICROSEMI	获取价格	GaAs Varactor Diodes Abrupt Junction
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