Datasheet > MURS160-T3

MURS160-T3

更新时间： 2024-09-21 21:06:27

品牌	Logo	应用领域
WTE		瞄准线光电二极管
页数	文件大小	规格书
4页	39K
描述
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MURS160-T3 数据手册

MURS160

1.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

WON-TOP ELECTRONICS

Features



Very Low VF 1.25V Max. @1.0A



Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Surge Overload Rating to 30A Peak

Low Power Loss

Super-Fast Recovery Time

Ideally Suited for Use in High Frequency

SMPS, Inverters and As Free Wheeling Diodes

SMB/DO-214AA

Min

Mechanical Data

Dim

Max

3.94

4.70

2.11



Case: SMB/DO-214AA, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

3.30

4.06

1.91



Polarity: Cathode Band or Cathode Notch

Marking: Device Code, See Page 3

Weight: 0.093 grams (approx.)

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

0.152

5.08

0.305

5.59

2.44

0.203

1.27

2.13

0.051

0.76

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

MURS160

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

600

RMS Reverse Voltage

VR(RMS)

420

1.0

Average Rectified Output Current

@T_L= 110°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

Forward Voltage

@I_F= 1.0A

VFM

IRM

1.25

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

5.0

150

µA

Reverse Recovery Time (Note 1)

t_rr

Typical Junction Capacitance (Note 2)

Thermal Resistance Junction to Ambient (Note 3)

Thermal Resistance Junction to Lead (Note 3)

RθJA

RθJL

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_RR= 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on PCB with 5.0mm x 5.0mm x 0.013mm thick copper pads.

Revision: September, 2012

www.wontop.com

12 3 4

中文翻译

下载PDF

与MURS160-T3相关器件

型号	品牌	获取价格	描述	数据表
MURS160T3G	ONSEMI	获取价格	Surface Mount Ultrafast Power Rectifiers
MURS160-T3-LF	WTE	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, S
MURS16120CT	JINANJINGHENG	获取价格	POLYIMIDE PASSIVATED SUPER FAST RECTIFIER
MURS16120D1	JINANJINGHENG	获取价格	POLYIMIDE PASSIVATED SUPER FAST RECTIFIER
MURS1620CTA	MCC	获取价格
MURS1620FCTA	MCC	获取价格
MURS1640CTA	MCC	获取价格
MURS1640CT-BP-HF	MCC	获取价格	Rectifier Diode,
MURS1640FCTA	MCC	获取价格
MURS1660CT	MCC	获取价格