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MURF1620CTS PDF预览

MURF1620CTS

更新时间: 2024-02-06 18:29:59
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THINKISEMI /
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2页 373K
描述
16.0 Ampere Insulated Series Connection Ultra Fast Recovery Rectifiers

MURF1620CTS 数据手册

 浏览型号MURF1620CTS的Datasheet PDF文件第2页 
MURF1620CTS thru MURF1660CTS  
MURF1620CTS/MURF1640CTS/MURF1660CTS  
Pb Free Plating Product  
16.0 Ampere Insulated Series Connection Ultra Fast Recovery Rectifiers  
ITO-220AB  
Unit : inch (mm)  
Features  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
.189(4.8)  
.406(10.3)  
.165(4.2)  
.381(9.7)  
.134(3.4)  
.130(3.3)  
.118(3.0)  
.114(2.9)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
(2.55)  
.1  
Case: ITO-220AB full plastic isolated package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
(2.55)  
Case  
Case  
Case  
Case  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 2.0 gram approximately  
Doubler  
Tandem Polarity Tandem Polarity  
Suffix "CTD" Suffix "CTS"  
Series  
Negative  
Common Cathode Common Anode  
Suffix "CT" Suffix "CTA"  
Positive  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25o  
ambient temperature unless otherwise specified.  
C
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UNIT  
SYMBOL  
MURF1620CTS MURF1640CTS MURF1660CTS  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified  
16.0  
A
A
V
IF(AV)  
o
(Total Device 2x8A=16A)  
Current T  
C
=100 C  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
175  
150  
Maximum Instantaneous Forward Voltage  
V
F
0.98  
1.3  
1.7  
(Per Diode/Per Leg)  
@ 8.0 A  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
=25oC  
5.0  
100  
μA  
μA  
J
I
R
J
=125oC  
nS  
pF  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
35  
90  
C
J
R
JC  
2.0  
/W  
Operating Junction and Storage  
Temperature Range  
-55 to + 150  
T , TSTG  
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  

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