Datasheet > MUR470

MUR470

更新时间： 2024-09-25 03:38:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		功效
页数	文件大小	规格书
2页	60K
描述
HIGH EFFICIENCY RECTIFIER

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中文翻译

获取价格

数据手册

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MUR470 数据手册

GALAXY ELECTRICAL

MUR470 --- MUR4100

VOLTAGE RANGE: 700---1000 V

CURRENT: 4.0 A

HIGH EFFICIENCY RECTIFIER

FEATURES

Low cost

DO - 27

Diffused junction

Low leakage

Low forward voltage drop

High crrent capability

Easilycleaned with freon, alcohol, lsopropand

and similar solvents

MECHANICAL DATA

Case: JEDEC DO-27, molded plastic

Terminals: Axial leads,solderable per MIL-STD- 202 ,

Method 208

Polarity: Color band denotes cathode

Weight: 0.041ounces, 1.15 grams

Mounting: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by20%.

MUR470 MUR480 MUR490 MUR4100 UNITS

Maximumrecurrent peak reverse voltage

Maximum RMS voltage

700

800

V_RRM

V_RMS

V_DC

900

630

900

1000

700

490

700

560

800

MaximumDC blocking voltage

1000

Maximumaverage forw ard rectified current

9.5mmlead length, @T_A=75

4.0

I_F(AV)

Peak forw ard surge current

10ms single half-sine-w ave

125.0

I_FSM

superimposed on rated load

@T_J=125

Maximuminstantaneous forw ard voltage

@ 4.0A

1.8

V_F

I_R

Maximum reverse current

@T_A=25

10.0

at rated DC blocking voltage @T_A=100

100.0

Maximum reverse recovery time

Typical junction capacitance

Typical thermal resistance

(Note1)

(Note2)

(Note3)

C_J

R_θ_JA

Operating junction temperature range

- 55 ----- + 150

Storage temperature range

T_STG

NOTE: 1.Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.

www.galaxycn.com

2. Measured at 1.0MH_Zand applied reverse voltage of 4.0V DC.

3. Thermal resistance f rom junction to ambient.

BLGALAXY ELECTRICAL

Document Number 0262022

中文翻译

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