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MUR3020GD PDF预览

MUR3020GD

更新时间： 2024-02-01 09:19:03
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 802K
描述
30 Ampere Heatsink Dual Tandem Polarity Ultra Fast Recovery Half Bridge Rectifiers

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MUR3020GD 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：TO-247AC包装说明：R-PSFM-T3
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.34Is Samacsys：N
其他特性：FREE-WHEELING DIODE, LOW LEAKAGE CURRENT应用：ULTRA FAST RECOVERY
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.05 VJEDEC-95代码：TO-247AC
JESD-30 代码：R-PSFM-T3最大非重复峰值正向电流：200 A
元件数量：2相数：1
端子数量：3最高工作温度：175 °C
最大输出电流：15 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大重复峰值反向电压：200 V最大反向恢复时间：0.035 µs
子类别：Rectifier Diodes表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40Base Number Matches：1

MUR3020GD 数据手册

 浏览型号MUR3020GD的Datasheet PDF文件第2页 
MUR3020GD thru MUR3060GD  
MUR3020GD/MUR3040GD/MUR3060GD  
Pb Free Plating Product  
30 Ampere Heatsink Dual Tandem Polarity Ultra Fast Recovery Half Bridge Rectifiers  
Unit : inch (mm)  
TO-220AB/TO-220-3L  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Latest P/G technology with ultra fast recovery time  
Low forward voltage drop  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
High current capability  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS,Motor Control and UPS  
Car Audio Amplifiers and Sound Device Systems  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
ꢀ
ꢀ
ꢀ
Case: Heatsink TO-220AB  
.1(2.54)  
.1(2.54)  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Polarity: As marked on diode body  
Mounting position: Any  
Case  
Case  
Case  
Case  
ꢀ
ꢀ
ꢀ
Doubler  
Series  
Negative  
Positive  
Common Cathode Common Anode Tandem Polarity Tandem Polarity  
Suffix "GS" Suffix "GD"  
Weight: 2.2 gram approximately  
Suffix "GC"  
Suffix "GA"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
o
Rating at 25  
C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UNIT  
SYMBOL  
MUR3020GD MUR3040GD MUR3060GD  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current TC=125oC  
30.0  
300  
1.3  
A
A
V
IF(AV)  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
Maximum Instantaneous Forward Voltage  
@ 15.0 A  
VF  
IR  
0.98  
1.7  
Maximum DC Reverse Current @TJ=25oC  
At Rated DC Blocking Voltage @TJ=125oC  
uA  
uA  
nS  
5
100  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Trr  
CJ  
35-50  
150  
pF  
oC  
Operating Junction and Storage  
Temperature Range  
T
J, TSTG  
-55 to +150  
.
= 0.5A I = 1 0A Irr = 0.25A.  
F R  
NOTES : (1) Reverse recovery test conditions I  
(2) Thermal Resistance junction to terminal.  
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
12

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