MUR1020FCT-B

更新时间： 2024-01-09 02:06:25

品牌	Logo	应用领域
美微科 - MCC		整流二极管局域网超快恢复二极管快速恢复二极管
页数	文件大小	规格书
2页	104K
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MUR1020FCT-B 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MUR1010CT

THRU

MUR1020CT

Features

Glass passivated chip

Superfast switching time for hight efficiency

Low reverse leakage current

High surge capacity

10 Amp Super Fast

Gl assPassivated

Rectifier

100 to 200 Volts

Maximum Ratings

Operating Junction Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

TO-220AB

Microsemi

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak

Reverse

Voltage

100V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

MUR1010CT MUR1010CT

MUR1020CT MUR1020CT

70V

140V

100V

200V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

10 A

T_C= 125°C

Peak Forward Surge

Current

I_FSM

55 A

8.3ms, half sine

Maximum Forward

Voltage Drop Per

Element

PIN 1

PIN 3

PIN 2

CASE

0.975V

T_J= 25°C I^F= 5A

T_J= 125°C

T_J= 25°C I^F=10A

0.925V

V_F

1.25V

1.20V

ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ

T_J= 125°C

ꢇ ꢇ ꢇ ꢇ

INCHES

ꢂꢁꢄ

ꢀꢁꢂ

ꢂꢈꢉ

ꢂꢁꢄ

14.22

9.65

ꢂꢈꢉ

15.88

10.67

3.43

ꢄꢆꢊꢃ

Maximum DC

.560

.380

.100

.625

.420

.135

Reverse Current At

Rated DC Blocking

Voltage

Maximum Reverse

Recovery Time

I_R

50uA

500uA

T_J= 25°C

T_J= 100°C

2.54

.230

.380

---

.500

.090

.270

.420

.250

.580

.110

.045

.025

5.84

9.65

---

12.70

2.29

6.86

10.67

6.35

14.73

2.79

1.14

0.64

I^F=0.5A, Ir=1.0A,

I^rr=0.25A

35ns

.020

.012

0.51

0.30

.139

.140

.045

.161

.190

.055

3.53

3.56

1.14

4.09

4.83

1.40

Typical Junction

Capacitance

C_J

80pF Measured at

1.0MHz, V_R=4.0V

*Pulse Test: Pulse Width 300msec, Duty Cycle 2%

www.mccsemi.com

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