是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SC-88 | 包装说明: | CASE 419B-02, SC-70, SC-88, 6 PIN |
针数: | 6 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.21 |
Is Samacsys: | N | 其他特性: | BUILT-IN BIAS RESISTOR |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 160 |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e0 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.15 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn80Pb20) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MUN5116DW1T1 | ONSEMI |
完全替代 |
Dual Bias Resistor Transistors | |
MUN5115DW1T1G | ONSEMI |
类似代替 |
Dual Bias Resistor Transistors | |
MUN5111T1G | ONSEMI |
类似代替 |
Bias Resistor Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MUN5115DW1T1G | ONSEMI |
获取价格 |
Dual Bias Resistor Transistors | |
MUN5115DW1T2 | MOTOROLA |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon | |
MUN5115DW1T3 | MOTOROLA |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, CASE 41 | |
MUN5115DW-G | WEITRON |
获取价格 |
Transistor | |
MUN5115-G | WEITRON |
获取价格 |
Transistor | |
MUN5115T1 | MOTOROLA |
获取价格 |
PNP SILICON BIAS RESISTOR TRANSISTOR | |
MUN5115T1 | LRC |
获取价格 |
Bias Resistor Transistor | |
MUN5115T1 | ONSEMI |
获取价格 |
Bias Resistor Transistor | |
MUN5115T1G | ONSEMI |
获取价格 |
Bias Resistor Transistor | |
MUN5115T3 | MOTOROLA |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-70, |