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SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET
53 AMPERES
500 VOLTS
This advanced high voltage TMOS E–FET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
R
= 0.080 OHM
DS(on)
4
1
3
•
•
•
2500 V RMS Isolated Isotop Package
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
2
•
•
•
•
Diode is Characterized for Use in Bridge Circuits
Very Low Internal Parasitic Inductance
D
I
and V
Specified at Elevated Temperature
SOT–227B
DSS
U. L. Recognized, File #E69369
DS(on)
1. Source
2. Gate
G
3. Drain
4. Source 2
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
500
500
Vdc
DSS
Drain–Gate Voltage (R
= 1.0 MΩ)
Gate–Source Voltage — Continuous
V
DGR
Vdc
GS
V
± 20
± 40
Vdc
Vpk
GS
Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)
V
GSM
p
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (t ≤ 10 µs)
I
I
53
33
210
Adc
D
D
I
p
DM
Total Power Dissipation
Derate above 25°C
P
D
460
3.70
Watts
W/°C
Operating and Storage Temperature Range
T , T
J stg
–40 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy
E
AS
mJ
(V
DD
= 25 Vdc, V
= 10 Vdc, I = 53 Apk, L = 0.29 mH, R =25Ω)
400
GS
L
G
RMS Isolation Voltage
V
R
2500
Vac
ISO
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
0.28
62.5
°C/W
θJC
θJA
R
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
T
L
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
ISOTOP is a trademark of SGS–THOMSON Microelectronics.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola TMOS Power MOSFET Transistor Device Data
1
Motorola, Inc. 1996
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