Datasheet > MTE015N15RE3-0-UB-X

MTE015N15RE3-0-UB-X

更新时间： 2022-02-26 14:03:31

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
8页	371K
描述
N-Channel Enhancement Mode Power MOSFET

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Spec. No. : C838E3

Issued Date : 2016.06.13

Revised Date : 2016.06.23

Page No. : 1/8

CYStech Electronics Corp.

N-Channel Enhancement Mode Power MOSFET

MTE015N15RE3

BVDSS

ID@VGS=10V, TC=25°C

150V

90A

RDS(ON)@VGS=10V, ID=30A

16mΩ (typ)

Features

• Low Gate Charge

• Simple Drive Requirement

• Repetitive Avalanche Rated

• Fast Switching Characteristic

• Pb-free lead plating and RoHS compliant package

Symbol

Outline

TO-220

MTE015N15RE3

G：Gate

D：Drain

S：Source

G D S

Ordering Information

Device

Package

Shipping

50 pcs/tube, 20 tubes/box, 4 boxes / carton

TO-220

(Pb-free lead plating package)

MTE015N15RE3-0-UB-X

Environment friendly grade : S for RoHS compliant products, G for RoHS

compliant and green compound products

Packing spec, UB : 50 pcs / tube, 20 tubes/box

Product rank, zero for no rank products

Product name

MTE015N15RE3

CYStek Product Specification

12 3 4 5 6 7 8

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