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MT58L256L18F1B-6.8 PDF预览

MT58L256L18F1B-6.8

更新时间: 2023-08-15 00:00:00
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
31页 349K
描述
Standard SRAM, 256KX18, 6.8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028BHA, BGA-119

MT58L256L18F1B-6.8 数据手册

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4Mb : 256K x 18, 128K x 32/36  
FLOW-THROUGH SYNCBURST SRAM  
FBGA PIN DESCRIPTIONS (co n t in u e d )  
x18  
x32/x36  
SYMBOL TYPE  
Supply Ground: GND.  
DESCRIPTION  
1H, 2H, 4C, 4N, 1H, 2H, 4C, 4N,  
5C, 5D, 5E 5F, 5C, 5D, 5E 5F,  
5G, 5H, 5J, 5K, 5G, 5H, 5J, 5K,  
5L, 5M, 6C, 6D, 5L, 5M, 6C, 6D,  
6E, 6F, 6G, 6H, 6E, 6F, 6G, 6H,  
6J, 6K, 6L, 6M, 6J, 6K, 6L, 6M,  
7C, 7D, 7E, 7F, 7C, 7D, 7E, 7F,  
VSS  
7G, 7H, 7J,  
7K, 7L, 7M,  
7N, 8C, 8N  
7G, 7H, 7J,  
7K, 7J, 7M,  
7N, 8C, 8N  
5P, 5R, 7P, 7R 5P, 5R, 7P, 7R  
DNU  
NC  
Do Not Use: These signals may either be unconnected or wired to  
GND to improve package heat dissipation.  
1A, 1B, 1C,  
1D, 1E, 1F,  
1G, 1P, 2C,  
2J, 2K,  
1A, 1B, 1P,  
2C, 2N,  
2P, 2R, 3H,  
5N, 6N,  
No Connect: These signals are not internally connected and may  
be connected to ground to improve package heat dissipation.  
Pins 11P, and 6N reserved for address pin expansion; 8Mb, and  
16Mb respectively.  
2L, 2M, 2N,  
2P, 2R, 3H,  
4B, 5A, 5N,  
6N, 9H, 10C,  
10D, 10E, 10F,  
10G, 10H,  
10N, 11B,  
9H, 10C,  
10H, 10N,  
11A, 11B,  
11P  
11J, 11K,  
11L, 11M,  
11N, 11P,  
4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM  
Micron Technology, Inc., reservesthe right to change productsor specificationswithout notice.  
10  
MT58L256L18F1_D.p65 Rev. 10/01  
©2001, Micron Technology, Inc.  

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