Datasheet > MT58L256L18P1F-5

MT58L256L18P1F-5

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
30页	466K
描述
Cache SRAM, 256KX18, 2.8ns, CMOS, PBGA165, FBGA-165

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MT58L256L18P1F-5 数据手册

4Mb: 256K x 18, 128K x 32/36

PIPELINED, SCD SYNCBURST SRAM

4Mb SYNCBURST^™

SRAM

MT58L256L18P1, MT58L128L32P1,

MT58L128L36P1; MT58L256V18P1,

MT58L128V32P1, MT58L128V36P1

3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle

Deselect

FEATURES

• Fast clock and OE# access times

• Single +3.3V +0.3V/-0.165V power supply (V^DD

100-PINTQFP

)

• Separate +3.3V or +2.5V isolated output buffer

supply (V^DDQ)

• SNOOZE MODE for reduced-power standby

• Single-cycle deselect (Pentium^®BSRAM-compatible)

• Common data inputs and data outputs

• Individual BYTE WRITE control and GLOBAL WRITE

• Three chip enables for simple depth expansion

and address pipelining

• Clock-controlled and registered addresses, data

I/Os and control signals

• Internally self-timed WRITE cycle

• Burst control pin (interleaved or linear burst)

• Automatic power-down for portable applications

• 165-pin FBGA package

165-BALLFBGA

• 100-pin TQFP package

• Low capacitive bus loading

• x18, x32, and x36 versions available

OPTIONS

MARKING

• Timing (Access/Cycle/MHz)

2.6ns/4.4ns/225 MHz

2.8ns/5ns/200 MHz

3.5ns/6ns/166 MHz

4.0ns/7.5ns/133 MHz

5ns/10ns/100 MHz

-4.4

-5

-6

-7.5

-10

NOTE: 1. JEDEC-standardMS-026BHA(LQFP).

• Configurations

3.3V I/O

256K x 18

128K x 32

128K x 36

2.5V I/O

MT58L256L18P1

MT58L128L32P1

MT58L128L36P1

* A Part Marking Guide for the FBGA devices can be found on Micron’s

Web site—http://www.micron.com/support/index.html.

** Industrial temperature range offered in specific speed grades and

configurations. Contact factory for more information.

256K x 18

128K x 32

128K x 36

MT58L256V18P1

MT58L128V32P1

MT58L128V36P1

GENERALDESCRIPTION

• Packages

The Micron^®SyncBurst^™SRAM family employs

high-speed, low-power CMOS designs that are fabri-

cated using an advanced CMOS process.

100-pin TQFP

165-pin FBGA

• Operating Temperature Range

Commercial (0°C to +70°C)

Micron’s 4Mb SyncBurst SRAMs integrate a

256K x 18, 128K x 32, or 128K x 36 SRAM core with ad-

vanced synchronous peripheral circuitry and a 2-bit

burst counter. All synchronous inputs pass through

registers controlled by a positive-edge-triggered single

clock input (CLK). The synchronous inputs include all

addresses, all data inputs, active LOW chip enable

None

Industrial (-40°C to +85°C)**

Part Number Example:

MT58L256L18P1T-6

4Mb:256Kx18, 128Kx32/36Pipelined, SCDSyncBurstSRAM

MT58L256L18P1_F.p65 – Rev. F, Pub. 1/03 EN

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

12 3 4 5 6 7...30

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与MT58L256L18P1F-5相关器件

型号	品牌	描述	获取价格	数据表
MT58L256L18P1F-6	CYPRESS	Cache SRAM, 256KX18, 3.5ns, CMOS, PBGA165, FBGA-165	获取价格
MT58L256L18P1F-7.5	CYPRESS	Cache SRAM, 256KX18, 4ns, CMOS, PBGA165, FBGA-165	获取价格
MT58L256L18P1T-10	CYPRESS	Cache SRAM, 256KX18, 5ns, CMOS, PQFP100, PLASTIC, MS-026, TQFP-100	获取价格
MT58L256L18P1T-10	ROCHESTER	256KX18 CACHE SRAM, 5ns, PQFP100, PLASTIC, MS-026, TQFP-100	获取价格
MT58L256L18P1T-10IT	CYPRESS	Cache SRAM, 256KX18, 5ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100	获取价格
MT58L256L18P1T-4	CYPRESS	Standard SRAM, 256KX18, 2.3ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100	获取价格

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