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MT4C4001JECJ-12/IT PDF预览

MT4C4001JECJ-12/IT

更新时间: 2024-01-04 13:37:29
品牌 Logo 应用领域
AUSTIN 动态存储器
页数 文件大小 规格书
20页 251K
描述
1 MEG x 4 DRAM Fast Page Mode DRAM

MT4C4001JECJ-12/IT 技术参数

生命周期:End Of Life零件包装代码:SOJ
包装说明:SOJ,针数:20
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.11
访问模式:FAST PAGE最长访问时间:120 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHJESD-30 代码:R-CDSO-J20
JESD-609代码:e0长度:17.145 mm
内存密度:4194304 bit内存集成电路类型:FAST PAGE DRAM
内存宽度:4功能数量:1
端口数量:1端子数量:20
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX4
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:SOJ
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified座面最大高度:3.556 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
宽度:8.89 mmBase Number Matches:1

MT4C4001JECJ-12/IT 数据手册

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DRAM  
MT4C4001J  
Austin Semiconductor, Inc.  
NOTES:  
point only; if tRAD is greater than the specified tRAD (MAX)  
limit, then access time is controlled exclusively by tAA  
1. All voltages referenced to Vss.  
2. This parameter is sampled, not 100% tested. Capacitance  
is measured with Vcc=5V, f=1 MHz at less than 50mVrms,  
TA = 25°C ±3°C, Vbias = 2.4V applied to each input and  
output individually with remaining inputs and outputs open.  
3. Icc is dependent on cycle rates.  
4. Icc is dependent on output loading and cycle rates.  
Specified values are obtained with minimum cycle time and  
the output open.  
5. Enables on-chip refresh and address counters.  
6. The minimum specifications are used only to indicate cycle  
time at which proper operation over the full temperature range  
.
19. Either tRCH or tRRH must be satisfied for a READ cycle.  
20. tOFF (MAX) defines the time at which the output achieves  
the open circuit conditions and is not referenced to VOH or  
VOL  
21. tWCS, tRWD, tAWD, and tCWD are not restrictive operating  
parameters. tWCS applies to EARLY-WRITE cycles. tRWD  
AWD, and tCWD apply to READ-MODIFY-WRITE cycles.  
.
,
t
If tWCS > tWCS (MIN), the cycle is an EARLY-WRITE cycles  
and the data output will remain an open circuit throughout the  
entire cycle. If tRWD > tRWD (MIN), tAWD > tAWD (MIN) and  
(-55°C < TA < 125°C) is assured.  
7. An initial pause of 100µs is required after power-up  
followed by eight RAS\ refresh cycles (RAS\-ONLY or CBR  
with WE\ HIGH) before proper device operation is assured.  
The eight RAS\ cycle wake-up should be repeated any time  
the 16ms refresh requirement is exceeded.  
tCWD > tCWD (MIN), the cycle is a READ-MODIFY-WRITE  
and the data output will contain data read from the selected  
cell. If neither of the above conditions is met, the state of the  
data out is indeterminate. OE\ held HIGH and WE\ taken LOW  
after CAS\ goes LOW results in a LATE-WRITE (OE\  
8. AC characteristics assume tT = 5ns.  
controlled) cycle. tWCS, tRWD, tCWD, and tAWD are not  
applicable in a LATE-WRITE cycle.  
22. These parameters are referenced to CAS\ leading edge in  
EARLY-WRITE cycle and WE\ leading edge in LATE-WRITE  
cycles and WE\ leading edge in LATE-WRITE or  
READ-MODIFY-WRITE cycle.  
9. VIH (MIN) and VIL (MAX) are reference levels for  
measuring timing of input signals. Transition times are  
measured between VIH and VIL (or between VIL and VIH).  
10. In addition to meeting the transition rate specification, all  
input signals must transit between VIH and VIL (or between  
VIL and VIH) in a monotonic manner.  
23. If OE\ is tied permanently LOW, LATE-WRITE or  
READ-MODIFY-WRITE operations are not possible.  
24. A HIDDEN REFRESH may also be performed after a  
WRITE cycle. In this case, WE\=LOW and OE\=HIGH.  
11. If CAS\ = VIH, data outputs (DQs) are High-Z.  
12. If CAS\ = VIL, data outputs (DQs) may contain data from  
the last valid READ cycle.  
25. tWTS and tWTH are setup and hold specifications for the  
WE\ pin being held LOW to enable the JEDEC test mode (with  
CBR timing constraints). These two parameters are the  
13. Measured with a load equivalent to two TTL gates and  
100pF.  
14. Assumes that tRCD < tRCD (MAX). If tRCD is greater than  
the maximum recommended value shown in this table, tRAC  
will increase by the amount that tRCD exceeds the value shown.  
inverts of tWRP and tWRH in the CBR REFRESH cycle.  
26. LATE-WRITE and READ-MODIFY-WRITE cycles must  
have both tOD and tOEH met (OE\ HIGH during WRITE cycle)  
in order to ensure that the output buffers will be open during  
the WRITE cycle. The DQs will provide the previously read  
data if CAS\ remains LOW and OE\ is taken back LOW after  
15. Assumes that tRCD > tRCD (MAX)  
16. If CAS\ is LOW at the falling edge of RAS\, DQs will be  
maintained from the previous cycle. To initiate a new cycle  
and clear the data out buffer, CAS\ must be pulsed HIGH for  
tOEH is met. If CAS\ goes HIGH prior to OE\ going back LOW,  
the DQs will remain open.  
tCPN  
.
17. Operation within the tRCD (MAX) limit ensures that tRAC  
(MAX) can be met. tRCD (MAX) is specified as a reference  
point only; if tRCD is greater than the specified tRCD (MAX)  
27. The DQs open during READ cycles once tOD or tOFF  
occur. If CAS\ goes HIGH first, OE\ becomes a “don’t care.”  
If OE\ goes HIGH and CAS\ stays LOW, OE\ is not a “don’t  
care;” and the DQs will provide the previously read data if  
OE\ is taken back LOW (while CAS\ remains LOW).  
28. JEDEC test mode only.  
limit, then access time is controlled exclusively by tCAC  
.
18. Operation within the tRAD (MAX) limit ensures that tRCD  
(MAX) can be met. tRAD (MAX) is specified as a reference  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
MT4C4001J  
Rev. 1.5 10/02  
7

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