Datasheet > MT110C12T1

MT110C12T1

更新时间： 2024-02-13 04:28:02

品牌	Logo	应用领域
江苏爱普特 - APTSEMI		/
页数	文件大小	规格书
4页	158K
描述
Thyristor Module

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中文翻译

获取价格

数据手册

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MT110C12T1 数据手册

MT110C18T1

Thyristor Module

VRRM / VDRM 800 to 1800V

ITAV

110A

Applications

Power Converters

Lighting Control

DC Motor Control and Drives

Heat and temperature control

Circuit

Features

International standard package

High Surge Capability

Glass passivated chip

Simple Mounting

Heat transfer through aluminum oxide DBC

ceramic isolated metal baseplate

UL recognized applied for file no. E360040

Module Type

TYPE

VRRM

800V

1200V

1600V

1800V

VRSM

900V

1300V

1700V

1900V

MT110C08T1

MT110C12T1

MT110C16T1

MT110C18T1

Maximum Ratings

Symbol

Conditions

Values

Units

I_TAV

Sine 180^o;Tc=85℃

110

T_VJ=45℃ t=10ms, sine

T_VJ=125℃ t=10ms, sine

2250

1900

I_TSM

i²t

T_VJ=45℃ t=10ms, sine

T_VJ=125℃ t=10ms, sine

25000

18000

A²s

Visol

Tvj

a.c.50HZ;r.m.s.;1min

3000

-40 to 130

-40 to 125

3±15%

5±15%

℃

Tstg

℃

To terminals(M5)

To heatsink(M6)

T_VJ= T_VJM, 2/3V_DRM,I_G=500mA

Tr<0.5us,tp>6us

di/dt

150

A/us

dv/dt

T_J= T_VJM,2/3V_DRM, linear voltage rise

Maximum allowable acceleration

Module(Approximately)

1000

V/us

m/s²

Weight

100

Thermal Characteristics

Symbol

Rth(j-c)

Conditions

Cont.;per thyristor / per module

Values

0.28/0.14

0.2/0.1

Units

℃/W

Rth(c-s)

per thyristor / per module

℃/W

Document Number: S-M0037

Rev.1.0, May.31, 2013

www.apt-semi.com

12 3 4

中文翻译

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