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MSM548512L PDF预览

MSM548512L

更新时间: 2022-11-25 14:40:07
品牌 Logo 应用领域
冲电气 - OKI 静态存储器
页数 文件大小 规格书
12页 162K
描述
524,288-Word X 8-Bit High-Speed PSRAM

MSM548512L 数据手册

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E2L0044-17-Y1  
This version: Jan. 1998  
Previous version: Dec. 1996  
¡ Semiconductor  
MSM548512L  
524,288-Word ¥ 8-Bit High-Speed PSRAM  
DESCRIPTION  
TheMSM548512LisfabricatedusingOKI’sCMOSsilicongateprocesstechnology. Thisprocess,  
coupledwithsingle-transistermemorystoragecells,permitsmaximumcircuitdensity,minimum  
chip size and high speed.  
MSM548512L has Self-refresh mode in addition to Address-refresh mode and Auto-refresh  
mode. In the Self-refresh mode the internal refresh timer and address counter refresh the  
dynamic memory cells automatically. This series allows low power consumption when using  
standby mode with Self-refresh.  
The MSM548512L also features a static RAM-like write function that writes the data into the  
memory cell at the rising edge of WE.  
FEATURES  
• Large capacity  
• Fast access time  
• Low power  
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4-Mbit (524,288-word ¥ 8 bits)  
80 ns max.  
200 µA max. (standby with Self-refresh)  
Self refresh  
SRAM WE pin, no address multiplex  
5 V ±10%  
2048 cycle/32 ms auto-address refresh  
SRAM standard package  
• Refresh free  
• Logic compatible  
• Single power supply  
• Refresh  
• Package compatible  
• Package options:  
32-pin 600 mil plastic DIP  
32-pin 525 mil plastic SOP  
(DIP32-P-600-2.54)  
(SOP32-P-525-1.27-K) (Product : MSM548512L-xxGS-K)  
xx indicates speed rank.  
(Product : MSM548512L-xxRS)  
PRODUCT FAMILY  
Access Time (Max.)  
Family  
MSM548512L-80RS  
MSM548512L-10RS  
MSM548512L-12RS  
MSM548512L-80GS-K  
MSM548512L-10GS-K  
MSM548512L-12GS-K  
Package  
80 ns  
100 ns  
120 ns  
80 ns  
600 mil 32-pin  
Plastic DIP  
525 mil 32-pin  
Plastic SOP  
100 ns  
120 ns  
1/12  

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