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MSHV40P PDF预览

MSHV40P

更新时间: 2024-09-23 21:18:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 138K
描述
Rectifier Diode, 1 Element, 0.1A, 4000V V(RRM),

MSHV40P 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.84配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):5 V
最大非重复峰值正向电流:30 A元件数量:1
最高工作温度:175 °C最大输出电流:0.1 A
最大重复峰值反向电压:4000 V子类别:Rectifier Diodes
表面贴装:NOBase Number Matches:1

MSHV40P 数据手册

 浏览型号MSHV40P的Datasheet PDF文件第2页 
MSHV40P  
CaseDO- 41  
Glass Passivated  
High Voltage Diodes  
Reverse Voltage 4000V  
Forward current 10 mA  
Features  
z
z
z
z
z
Plastic package  
Glass passivated die construction  
High Reverse Voltage  
Low cost  
Plastic material has UL flammability  
recognition 94V-0  
z
Polyimide coating on die stack  
Application  
z
Car ignition systems  
z
Automotive applications with extreme  
temperature requirements  
Mechanical Data  
Case: Molded plastic case  
Terminals: Plated leads solderable per  
MIL-STD-750, Method 2026  
Polarity: Marked on Body  
Mounting Position: Any  
Weight: 0.33gApproximately)  
Dimensions Inches and (mm)  
Maximum Ratings and Electrical Characteristics @ TA = 25OC unless otherwise specified  
Values  
TYP.  
Parameter  
Symbol  
Unit  
MIN.  
MAX.  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
4000  
V
V
V
2800  
4000  
Maximum DC Blocking Voltage  
Maximum average forward output rectified current  
0.375” (9.5mm) lead length at T A = 55OC  
IF(AV)  
10  
100  
30  
mA  
Peak forward surge current single half sine-wave  
superimposed on rated load (JEDEC Method)  
IFSM  
VF  
25  
A
V
Instantaneous Forward Voltage at 10mA DC  
VR=VRRM TA =25OC  
VR=VRRM TA =175OC  
2.8  
5
1.0  
IR  
uA  
30  
-65  
-65  
250  
300  
+175  
+175  
Operating Junction  
Tj  
Storage temperature range  
TSTG  
Document Number: MSHV40P  
Aug.16, 2010  
www.smsemi.com  
1

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