5秒后页面跳转
MQSMAJ12CAE3 PDF预览

MQSMAJ12CAE3

更新时间: 2024-11-19 19:05:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
5页 207K
描述
Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMAJ, 2 PIN

MQSMAJ12CAE3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-214AC包装说明:ROHS COMPLIANT, PLASTIC, SMAJ, 2 PIN
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.58最小击穿电压:13.3 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:500 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL最大功率耗散:1.56 W
认证状态:Not Qualified最大重复峰值反向电压:12 V
表面贴装:YES技术:AVALANCHE
端子面层:MATTE TIN端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MQSMAJ12CAE3 数据手册

 浏览型号MQSMAJ12CAE3的Datasheet PDF文件第2页浏览型号MQSMAJ12CAE3的Datasheet PDF文件第3页浏览型号MQSMAJ12CAE3的Datasheet PDF文件第4页浏览型号MQSMAJ12CAE3的Datasheet PDF文件第5页 
SMAJ5.0 thru SMAJ170CA, e3  
SURFACE MOUNT 500 Watt  
Transient Voltage Suppressor  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
PACKAGE  
This SMAJ5.0-170A series of surface mount 500 W Transient Voltage  
Suppressors (TVSs) protects a variety of voltage-sensitive components from  
destruction or degradation. The package outline is similar to the DO-214AC or  
DO-214BA. It is also available in a unidirectional configuration or as bidirectional  
with a C or CA suffix part number as well as RoHS Compliant with an “e3”suffix.  
Their response time is virtually instantaneous. As a result, they can be used for  
protection from ESD or EFT per IEC61000-4-2 and IEC61000-4-4, or for  
inductive switching environments and induced RF protection. They can also  
protect from secondary lightning effects per IEC61000-4-5 and class levels  
defined herein. Microsemi also offers numerous other TVS products to meet  
DO-214AC or BA  
(SMAJ)  
higher and lower power demands and special applications.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Selections for 5.0 to 170 volts standoff voltages (VWM  
)
Economical surface mount  
Suppresses transients up to 500 watts @ 10/1000 µs (see  
Figure 1) with fast response  
Available in Unidirectional or as Bidirectional  
construction with a C or CA suffix  
Optional 100% screening for avionics grade is available  
by adding MA prefix to part number for added 100%  
temperature cycle -55oC to +125oC (10X) as well as surge  
(3X) and 24 hours HTRB with post test VZ & IR (in the  
operating direction for unidirectional or both directions for  
bidirectional)  
Protects sensitive components such as IC’s,  
CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Protection from switching transients & induced RF  
Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively  
Secondary lightning protection per IEC61000-4-5  
with 42 Ohms source impedance:  
Options for screening in accordance with MIL-PRF-19500  
for JAN, JANTX, and JANTXV are available by adding  
MQ, MX, or MV prefixes respectively to part numbers.  
Class 1: SMAJ5.0 to SMAJ100A or CA  
Class 2: SMAJ5.0 to SMAJ51A or CA  
Class 3: SMAJ5.0 to SMAJ24A or CA  
Class 4: SMAJ5.0 to SMAJ12A or CA  
Axial-lead equivalent packages for thru-hole mounting  
available as P5KE6.8 to P5KE170CA (consult factory for  
other surface mount options)  
Moisture classification is Level 1 with no dry pack required  
per IPC/JEDEC J-STD-020B  
Secondary lightning protection per IEC61000-4-5  
with 12 Ohms source impedance:  
RoHS Compliant devices available by adding an “e3” suffix  
Class 1: SMAJ5.0 to SMAJ30A or CA  
Class 2: SMAJ5.0 to SMAJ16A or CA  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Peak Pulse Power dissipation at 25ºC: 500 watts at  
CASE: Void-free transfer molded thermosetting  
epoxy body meeting UL94V-0  
10/1000 μs (also see Fig 1,2, and 3)  
Impulse repetition rate (duty factor): 0.01%  
TERMINALS: C-bend (modified J-bend) leads Tin-  
Lead or RoHS compliant annealed matte-Tin plating  
solderable per MIL-STD-750, method 2026  
tclamping (0 volts to V(BR) min.): < 100 ps theoretical for  
unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -65ºC to +150ºC  
Thermal resistance: 15 ºC/W junction to lead or 80ºC/W  
junction to ambient when mounted on FR4 PC board (1oz  
Cu) with recommended footprint (see last page)  
Steady-State Power dissipation: 5 watts at TL = 75oC, or  
1.56 watts at TA = 25ºC when mounted on FR4 PC board  
with recommended footprint  
POLARITY: Cathode indicated by band. No  
marking on bi-directional devices  
MARKING: Part number without SMA prefix (e.g.  
5.0, 5.0A, 5.0Ae3, 5.0CA, 36A, 36CA, 36CAe3, etc.)  
TAPE & REEL option: Standard per EIA-481-1-A  
with 12 mm tape, 750 per 7 inch reel or 2500 per 13  
inch reel (add “TR” suffix to part number)  
WEIGHT: 0.064 grams  
Forward Surge Current at 25ºC: 40 amps peak, 8.3 ms  
half-sine wave. Maximum voltage of 3.50 V  
(unidirectional only)  
Solder temperatures: 260 ºC for 10 s (maximum)  
See package dimension on last page  
Copyright © 2009  
4-14-2009 REV K  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

与MQSMAJ12CAE3相关器件

型号 品牌 获取价格 描述 数据表
MQSMAJ12CAE3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMAJ12CATR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMAJ12CE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMAJ12CE3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMAJ12CTR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMAJ12E3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MQSMAJ12TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MQSMAJ13 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 500W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MQSMAJ130A MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 500W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MQSMAJ130AE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 500W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO-