Datasheet > MQSMAJ13

MQSMAJ13

更新时间： 2024-11-20 04:24:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
5页	207K
描述
Trans Voltage Suppressor Diode, 500W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, PLASTIC, SMAJ, 2 PIN

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MQSMAJ13 数据手册

SMAJ5.0 thru SMAJ170CA, e3

SURFACE MOUNT 500 Watt

Transient Voltage Suppressor

S C O T T S D A L E D I V I S I O N

DESCRIPTION

PACKAGE

This SMAJ5.0-170A series of surface mount 500 W Transient Voltage

Suppressors (TVSs) protects a variety of voltage-sensitive components from

destruction or degradation. The package outline is similar to the DO-214AC or

DO-214BA. It is also available in a unidirectional configuration or as bidirectional

with a C or CA suffix part number as well as RoHS Compliant with an “e3”suffix.

Their response time is virtually instantaneous. As a result, they can be used for

protection from ESD or EFT per IEC61000-4-2 and IEC61000-4-4, or for

inductive switching environments and induced RF protection. They can also

protect from secondary lightning effects per IEC61000-4-5 and class levels

defined herein. Microsemi also offers numerous other TVS products to meet

DO-214AC or BA

(SMAJ)

higher and lower power demands and special applications.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Selections for 5.0 to 170 volts standoff voltages (V_WM

)

•

Economical surface mount

Suppresses transients up to 500 watts @ 10/1000 µs (see

Figure 1) with fast response

Available in Unidirectional or as Bidirectional

construction with a C or CA suffix

•

Optional 100% screening for avionics grade is available

by adding MA prefix to part number for added 100%

temperature cycle -55^oC to +125^oC (10X) as well as surge

(3X) and 24 hours HTRB with post test V_Z& I_R(in the

operating direction for unidirectional or both directions for

bidirectional)

•

Protects sensitive components such as IC’s,

CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.

•

Protection from switching transients & induced RF

Compliant to IEC61000-4-2 and IEC61000-4-4 for

ESD and EFT protection respectively

•

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

•

Options for screening in accordance with MIL-PRF-19500

for JAN, JANTX, and JANTXV are available by adding

MQ, MX, or MV prefixes respectively to part numbers.

Class 1: SMAJ5.0 to SMAJ100A or CA

Class 2: SMAJ5.0 to SMAJ51A or CA

Class 3: SMAJ5.0 to SMAJ24A or CA

Class 4: SMAJ5.0 to SMAJ12A or CA

Axial-lead equivalent packages for thru-hole mounting

available as P5KE6.8 to P5KE170CA (consult factory for

other surface mount options)

•

Moisture classification is Level 1 with no dry pack required

per IPC/JEDEC J-STD-020B

Secondary lightning protection per IEC61000-4-5

with 12 Ohms source impedance:

RoHS Compliant devices available by adding an “e3” suffix

Class 1: SMAJ5.0 to SMAJ30A or CA

Class 2: SMAJ5.0 to SMAJ16A or CA

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Peak Pulse Power dissipation at 25^ºC: 500 watts at

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

10/1000 μs (also see Fig 1,2, and 3)

•

Impulse repetition rate (duty factor): 0.01%

•

TERMINALS: C-bend (modified J-bend) leads Tin-

Lead or RoHS compliant annealed matte-Tin plating

solderable per MIL-STD-750, method 2026

t_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

Operating and Storage temperature: -65^ºC to +150^ºC

Thermal resistance: 15 ^ºC/W junction to lead or 80^ºC/W

junction to ambient when mounted on FR4 PC board (1oz

Cu) with recommended footprint (see last page)

Steady-State Power dissipation: 5 watts at T_L= 75^oC, or

1.56 watts at T_A= 25^ºC when mounted on FR4 PC board

with recommended footprint

•

POLARITY: Cathode indicated by band. No

marking on bi-directional devices

•

MARKING: Part number without SMA prefix (e.g.

5.0, 5.0A, 5.0Ae3, 5.0CA, 36A, 36CA, 36CAe3, etc.)

TAPE & REEL option: Standard per EIA-481-1-A

with 12 mm tape, 750 per 7 inch reel or 2500 per 13

inch reel (add “TR” suffix to part number)

•

WEIGHT: 0.064 grams

Forward Surge Current at 25ºC: 40 amps peak, 8.3 ms

half-sine wave. Maximum voltage of 3.50 V

(unidirectional only)

Solder temperatures: 260 ^ºC for 10 s (maximum)

See package dimension on last page

4-14-2009 REV K

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4 5

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与MQSMAJ13相关器件

型号	品牌	获取价格	描述	数据表
MQSMAJ130A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MQSMAJ130AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MQSMAJ130AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MQSMAJ130ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MQSMAJ130CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 130V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQSMAJ130CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 130V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQSMAJ130CAE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 130V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQSMAJ130CATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 130V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQSMAJ130CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 130V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQSMAJ130E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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