Datasheet > MQ6511A

MQ6511A

更新时间： 2024-09-23 21:21:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
2页	60K
描述
Rectifier Diode, 8 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC, DIP-14

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技术参数
数据手册

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MQ6511A 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DIP	包装说明：	R-CDIP-T14
针数：	14	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.70
风险等级：	5.7	其他特性：	HIGH RELIABILITY
配置：	COMMON CATHODE, 8 ELEMENTS	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	R-CDIP-T14
JESD-609代码：	e0	元件数量：	8
端子数量：	14	最高工作温度：	150 °C
最低工作温度：	-65 °C	最大输出电流：	0.3 A
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	IN-LINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
最大功率耗散：	0.4 W	认证状态：	Not Qualified
最大反向恢复时间：	0.02 µs	表面贴装：	NO
端子面层：	TIN LEAD	端子形式：	THROUGH-HOLE
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MQ6511A 数据手册

6511A

Isolated Diode Array with

HiRel MQ, MX, MV, and SP Screening Options

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated

by a planar process and mounted in a 14-PIN ceramic DIP package for use as

steering diodes protecting up to seven I/O ports from ESD, EFT, or surge by directing

them either to the positive side of the power supply line or to ground (see Figure 1).

An external TVS diode may be added between the positive supply line and ground to

prevent overvoltage on the supply rail. They may also be used in fast switching core-

driver applications. This includes computers and peripheral equipment such as

magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or

encoding applications. These arrays offer many advantages of integrated circuits such

as high-density packaging and improved reliability. This is a result of fewer pick and

place operations, smaller footprint, smaller weight, and elimination of various discrete

packages that may not be as user friendly in PC board mounting.

14-PIN Ceramic DIP

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Hermetic Ceramic Package

•

High Frequency Data Lines

RS-232 & RS-422 Interface Networks

Ethernet: 10 Base T

Computer I/O Ports

LAN

Isolated Diodes to Eliminate Cross-Talk Voltages

High Breakdown Voltage V_BR> 75 V at 5 μA

Low Leakage I_R< 100nA at 40 V

Low Capacitance C < 4.0 pF

Switching Core Drivers

Switching Speeds less than 10 ns

IEC 61000-4 Compatible (see circuit in figure 1)

61000-4-2 ESD: Air 15 kV, contact 8 kW

61000-4-4 (EFT): 40 A – 5/50 ns

61000-4-5 (surge): 12 A 8/20 μs

Options for screening in accordance with MIL-PRF-

19500/474 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or SP prefixes

respectively to part numbers. For example, designate

MX6511A for a JANTX screen.

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Reverse Breakdown Voltage of 75 Vdc (Note 1 & 2)

Continuous Forward Current of 300 mA dc (Note 1 & 3)

Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)

400 mW Power Dissipation per Junction @ 25^oC

•

14-PIN Ceramic DIP

Weight 2.05 grams (approximate)

Marking: Logo, part number, date code

Pin #1 to the left of the indent on top of package

Carrier Tubes; 25 pcs (standard)

600 mW Power Dissipation per Package @ 25^oC (Note 4)

Operating Junction Temperature range –65 to +150^oC

Storage Temperature range of –65 to +150^oC

NOTE 1: Each Diode

NOTE 2: Pulsed: P_W= 100 ms max; duty cycle <20%

NOTE 3: Derate at 2.4 mA/^oC above +25^oC

NOTE 4: Derate at 4.8 mW/^oC above +25^oC

ELECTRICAL CHARACTERISTICS (Per Diode) @ 25^oC unless otherwise specified

MAXIMUM

REVERSE

RECOVERY TIME

trr

MAXIMUM

FORWARD

VOLTAGE

MAXIMUM

FORWARD

RECOVERY

TIME

MAXIMUM

FORWARD

VOLTAGE

MATCH

MAXIMUM

REVERSE

CURRENT

MAXIMUM

REVERSE

CURRENT

MAXIMUM

CAPACITANCE

(PIN TO PIN)

I = I_R= 10 mAdc

C_t

= 1 mAdc

I = 100 mA

V_R= 0 V

F = 1 MHz

I = 100 mA

R = 100 ohms

I = 10 mA

(Note 1)

V_R= 40 V

V_R= 20 V

PART

NUMBER

µA

6511A

0.1

4.0

NOTE 1: Pulsed: P_W= 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.

3-27-2007

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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