5秒后页面跳转
MPSA13 PDF预览

MPSA13

更新时间: 2024-02-06 05:07:56
品牌 Logo 应用领域
商升特 - SEMTECH 晶体晶体管
页数 文件大小 规格书
1页 130K
描述
NPN Silicon Epitaxial Planar Transistors

MPSA13 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:not_compliant
风险等级:5.68配置:DARLINGTON
最小直流电流增益 (hFE):10000JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):125 MHzVCEsat-Max:1.5 V
Base Number Matches:1

MPSA13 数据手册

  
ST 2SB772T  
PNP SILICON EPITAXIAL POWER TRANSISTOR  
These devices are intended for use in audio  
frequency power amplifier and low speed switching  
applications  
E
C
B
TO-126 Plastic Package  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Collector Base Voltage  
Symbol  
-VCBO  
-VCEO  
-VEBO  
Value  
40  
Unit  
V
Collector Emitter Voltage  
Emitter Base Voltage  
30  
V
5
V
Collector Current - DC  
Collector Current - Pulse 1)  
-IC  
-IC  
3
7
A
A
Base Current - DC  
-IB  
0.6  
A
O
PD  
PD  
10  
1.0  
W
W
Total Power Dissipation @ TC = 25 C  
O
Total Power Dissipation @ TA = 25 C  
O
C
Operating and Storage Junction Temperature Range  
TJ, Ts  
- 65 to + 150  
1) PW=10ms, Duty Cycle 50%  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
hFE  
hFE  
hFE  
hFE  
hFE  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at -VCE = 2 V, -IC = 20 mA  
at -VCE = 2 V, -IC = 1 A  
30  
60  
100  
160  
200  
-
-
-
-
-
-
-
-
-
-
-
R
Q
P
E
120  
200  
320  
400  
Collector Emitter Breakdown Voltage  
at -IC = 1 mA  
-V(BR)CEO  
-V(BR)CBO  
-V(BR)EBO  
-ICBO  
30  
40  
5
-
-
-
-
-
-
-
V
V
Collector Base Breakdown Voltage  
at -IC = 1 mA  
Emitter Base Breakdown Voltage  
at -IE = 1 mA  
-
V
Collector Cutoff Current  
at -VCB = 30 V  
-
1
1
µA  
µA  
Emitter Cutoff Current  
at -VEB = 3 V  
-IEBO  
-
Collector Emitter Saturation Voltage  
at -IC = 2 A, -IB = 200 mA  
-VCE(sat)  
-VBE(sat)  
CO  
-
-
-
-
-
0.5  
2
V
V
Base Emitter Saturation Voltage  
at -IC = 2 A, -IB = 200 mA  
Output Capacitance  
55  
-
pF  
at -VCB = 10 V, f = 1 MHz  
Current Gain Bandwidth Product  
at -IC = 100 mA, -VCE = 5 V  
fT  
-
80  
-
MHz  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 25/05/2006  

与MPSA13相关器件

型号 品牌 描述 获取价格 数据表
MPS-A13 MICRO-ELECTRONICS SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS

获取价格

MPSA13(SOT-89) UTC Transistor

获取价格

MPSA13/D10Z TI 500mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

获取价格

MPSA13/D10Z(OPTION18) TI Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

获取价格

MPSA13/D10Z(OPTION5) TI Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

获取价格

MPSA13/D10Z{OPTION18} TI 500mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

获取价格