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MPS4250ARLRM PDF预览

MPS4250ARLRM

更新时间: 2024-11-26 13:11:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管放大器
页数 文件大小 规格书
4页 57K
描述
40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226, 3 PIN

MPS4250ARLRM 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CASE 29-11, TO-226, 3 PIN
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.21.00.95风险等级:5.14
Is Samacsys:N集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):250
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

MPS4250ARLRM 数据手册

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Order this document  
by MPS4250/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
3
2
BASE  
1
1
2
EMITTER  
3
MAXIMUM RATINGS  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
Rating  
CollectorEmitter Voltage  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
–40  
–40  
–40  
–5.0  
Unit  
Vdc  
V
CEO  
V
Vdc  
CES  
CBO  
EBO  
V
V
Vdc  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
mW  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
(I = –5.0 mA)  
C
V
–40  
–40  
–40  
–5.0  
Vdc  
Vdc  
Vdc  
Vdc  
(BR)CES  
(1)  
CollectorEmitter Sustaining Voltage  
V
(BR)CEO(sus)  
(I = –5.0)  
C
CollectorBase Breakdown Voltage  
(I = –10 A)  
C
V
(BR)CBO  
(BR)EBO  
EmitterBase Breakdown Voltage  
(I = –10 A)  
E
V
Collector Cutoff Current  
I
CBO  
(V  
CB  
(V  
CB  
= –50 V)  
= –40 V, T = 65°C)  
–10  
–3.0  
nA  
A
A
Emitter Cutoff Current  
(V = –3.0 V)  
I
–20  
nA  
EBO  
EB  
1. Pulse Test: Pulse Width = 300 s; Duty Cycle = 2.0%.  
Motorola, Inc. 1996

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