MPS4250RLRE

更新时间： 2024-02-04 08:28:55

品牌	Logo	应用领域
安森美 - ONSEMI		晶体小信号双极晶体管放大器
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MPS4250RLRE 数据手册

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by MPS4250/D

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

–40

–5.0

—

Unit

Vdc

CEO

Vdc

CES

CBO

EBO

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Breakdown Voltage

(I = –5.0 mA)

–40

–5.0

—

Vdc

(BR)CES

(1)

Collector–Emitter Sustaining Voltage

(BR)CEO(sus)

(I = –5.0)

Collector–Base Breakdown Voltage

(I = –10 A)

(BR)CBO

(BR)EBO

Emitter–Base Breakdown Voltage

(I = –10 A)

Collector Cutoff Current

CBO

= –50 V)

= –40 V, T = 65°C)

—

–10

–3.0

Emitter Cutoff Current

(V = –3.0 V)

—

–20

EBO

1. Pulse Test: Pulse Width = 300 s; Duty Cycle = 2.0%.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_c.a₁₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4

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