Datasheet > MPF4856RLRE

MPF4856RLRE

更新时间： 2024-09-28 04:38:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	167K
描述
40V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN

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MPF4856RLRE 数据手册

ON Semiconductort

JFET Switching

N–Channel – Depletion

MAXIMUM RATINGS

MPF4856

Rating

Drain–Source Voltage

Drain–Gate Voltage

Symbol

MPF4856

+40

Unit

Vdc

+40

Vdc

Reverse Gate–Source Voltage

Forward Gate Current

–40

Vdc

GSR

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

360

2.4

mW/°C

Storage Temperature Range

stg

–65 to +150

°C

CASE 29–11, STYLE 5

TO–92 (TO–226AA)

1 DRAIN

GATE

2 SOURCE

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Gate–Source Breakdown Voltage

Vdc

(BR)GSS

(I = 1.0 µAdc, V = 0)

–40

–

Gate Reverse Current

(V = –20 Vdc, V = 0)

GSS

–

0.25

0.5

nAdc

µAdc

(V = –20 Vdc, V = 0, T = 150°C)

Gate Source Cutoff Voltage

Drain–Cutoff Current (V = 15 Vdc, V = –10 Vdc)

–4.0

–10

Vdc

GS(off)

D(off)

–

0.25

0.5

nAdc

µAdc

(V = 15 Vdc, V = –10 Vdc, T = 150°C)

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current

Drain–Source On–Voltage

(1)

–

mAdc

Vdc

DSS

DS(on)

(I = 20 mAdc, V = 0)

0.75

SMALL–SIGNAL CHARACTERISTICS

Drain–Source “ON” Resistance

Input Capacitance

–

Ω

ds(on)

iss

(V = 0, V = –10 Vdc, f = 1.0 MHz)

Reverse Transfer Capacitance

(V = 0, V = –10 Vdc, f = 1.0 MHz)

rss

8.0

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle v 2.0%.

Semiconductor Components Industries, LLC, 2001

781

Publication Order Number:

June, 2001 – Rev.0

MPF4856/D

12 3 4

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