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MOCD213-MR2 PDF预览

MOCD213-MR2

更新时间: 2024-11-28 14:53:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 81K
描述
Optoelectronic Device

MOCD213-MR2 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
HTS代码:8541.40.80.00风险等级:5.84
当前传输比率-最小值:100%最大正向电流:0.06 A
最大正向电压:1.55 V最大绝缘电压:2500 V
安装特点:SURFACE MOUNT元件数量:2
最大通态电流:0.15 A最高工作温度:100 °C
最低工作温度:-40 °C最大功率耗散:0.15 W
子类别:Optocoupler - Transistor Outputs表面贴装:YES
Base Number Matches:1

MOCD213-MR2 数据手册

 浏览型号MOCD213-MR2的Datasheet PDF文件第2页浏览型号MOCD213-MR2的Datasheet PDF文件第3页浏览型号MOCD213-MR2的Datasheet PDF文件第4页浏览型号MOCD213-MR2的Datasheet PDF文件第5页浏览型号MOCD213-MR2的Datasheet PDF文件第6页浏览型号MOCD213-MR2的Datasheet PDF文件第7页 
DUAL CHANNEL PHOTOTRANSISTOR  
SMALL OUTLINE SURFACE MOUNT  
OPTOCOUPLERS  
MOCD213-M  
DESCRIPTION  
The MOCD213-M consist of two gallium arsenide infrared emitting diodes optically coupled to  
two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic  
package. It is ideally suited for high density applications and eliminates the need for through-  
the-board mounting.  
FEATURES  
• U.L. Recognized (File #E90700, Volume 2)  
• VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD213V-M)  
• Dual Channel Coupler  
• Convenient Plastic SOIC-8 Surface Mountable Package Style  
• Minimum Current Transfer Ratio 100% with Input Current of 10 mA  
• Minimum V(BR)CEO of 70 Volts Guaranteed  
ANODE 1  
1
8
COLLECTOR 1  
• Standard SOIC-8 Footprint, with 0.050” Lead Spacing  
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering  
• High Input-Output Isolation of 2500 VAC(rms) Guaranteed  
CATHODE 1  
ANODE 2  
2
3
7
6
5
EMITTER 1  
COLLECTOR 2  
EMITTER 2  
APPLICATIONS  
Feedback control circuits  
CATHODE 2  
4
Interfacing and coupling systems of different potentials and impedances  
General purpose switching circuits  
Monitor and detection circuits  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise specified)  
Rating  
Symbol  
Value  
Unit  
EMITTER  
IF  
60  
mA  
Forward Current - Continuous  
Forward Current - Peak (PW = 100 µs, 120 pps)  
Reverse Voltage  
IF (pk)  
VR  
1.0  
6.0  
90  
A
V
LED Power Dissipation @ TA = 25°C  
Derate above 25°C  
mW  
mW/°C  
PD  
0.8  
DETECTOR  
VCEO  
70  
V
Collector-Emitter Voltage  
Collector-Base Voltage  
VCBO  
VECO  
IC  
70  
7.0  
V
V
Emitter-Collector Voltage  
Collector Current-Continuous  
Detector Power Dissipation @ TA = 25°C  
Derate above 25°C  
150  
150  
1.76  
mA  
mW  
mW/°C  
PD  
VISO  
PD  
TOTAL DEVICE  
Input-Output Isolation Voltage (1,2,3)  
(f = 60 Hz, 1 min. Duration)  
Total Device Power Dissipation @ TA = 25°C  
Derate above 25°C  
2500  
Vac(rms)  
250  
mW  
mW/°C  
°C  
2.94  
Ambient Operating Temperature Range  
Storage Temperature Range  
Lead Soldering Temperature  
(1/16” from case, 10 sec. duration)  
TA  
-40 to +100  
-40 to +150  
Tstg  
°C  
TL  
260  
°C  
2001 Fairchild Semiconductor Corporation  
DS300272  
2/6/02  
1 OF 7  
www.fairchildsemi.com  

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