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MOCD217-M PDF预览

MOCD217-M

更新时间: 2024-11-27 22:28:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体光电晶体管光电晶体管输出元件输入元件
页数 文件大小 规格书
8页 496K
描述
DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS (LOW INPUT CURRENT)

MOCD217-M 数据手册

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DUAL CHANNEL PHOTOTRANSISTOR  
SMALL OUTLINE SURFACE MOUNT  
OPTOCOUPLERS (LOW INPUT CURRENT)  
MOCD217-M  
DESCRIPTION  
The MOCD217-M device consists of two gallium arsenide infrared emitting diodes optically coupled to  
two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It  
is ideally suited for high density applications and eliminates the need for through-the-board mounting.  
FEATURES  
• U.L. Recognized (File #E90700, Volume 2)  
• VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD217V-M)  
• Low Input Current (Specified @ 1 mA)  
• Minimum BV  
of 30 Volts Guaranteed  
CEO  
ANODE 1  
1
8
COLLECTOR 1  
• Convenient Plastic SOIC-8 Surface Mountable Package Style  
• Standard SOIC-8 Footprint, with 0.050" Lead Spacing  
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering  
CATHODE 1  
ANODE 2  
2
3
7
6
5
EMITTER 1  
• High Input-Output Isolation of 2500 V  
Guaranteed  
AC(rms)  
COLLECTOR 2  
EMITTER 2  
APPLICATIONS  
• Interfacing and coupling systems of different potentials and impedances  
• General purpose switching circuits  
CATHODE 2  
4
• Monitor and detection circuits  
ABSOLUTE MAXIMUM RATINGS (T = 25°C Unless otherwise specified)  
A
Rating  
Symbol  
Value  
Unit  
EMITTER  
Forward Current - Continuous  
Forward Current - Peak (PW = 100 µs, 120 pps)  
Reverse Voltage  
I
60  
1.0  
6.0  
90  
mA  
A
F
I (pk)  
F
V
V
R
LED Power Dissipation @ T = 25°C  
mW  
A
P
D
Derate above 25°C  
DETECTOR  
0.8  
mW/°C  
Collector-Emitter Voltage  
Emitter-Collector Voltage  
Collector Current-Continuous  
V
30  
7.0  
V
V
CEO  
V
ECO  
I
150  
150  
1.76  
mA  
C
Detector Power Dissipation @ T = 25°C  
mW  
mW/°C  
A
P
D
Derate above 25°C  
TOTAL DEVICE  
(1,2,3)  
Input-Output Isolation Voltage  
V
2500  
Vac(rms)  
ISO  
(f = 60 Hz, 1 min. Duration)  
Total Device Power Dissipation @ T = 25°C  
250  
mW  
mW/°C  
°C  
A
P
D
Derate above 25°C  
2.94  
Ambient Operating Temperature Range  
Storage Temperature Range  
T
-40 to +100  
-40 to +125  
A
T
°C  
stg  
© 2003 Fairchild Semiconductor Corporation  
Page 1 of 8  
4/10/03  

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