Datasheet > MMYE4P081L

MMYE4P081L

更新时间： 2024-09-29 14:54:47

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
6页	493K
描述
小信号金氧半電晶體

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中文翻译

获取价格

数据手册

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MMYE4P081L 数据手册

MMYE4P081L

P-Channel Enhancement Mode MOSFET

Features

Drain

• Surface-mounted package

• High speed switch

Gate

Applications

Source

• Portable appliances

• Battery management

1. Gate 2. Source 3. Drain

DFN2020-3HM Plastic Package

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Parameter Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

-V_DS

V_GS

-I_D

± 20

Peak Drain Current, Pulsed ¹⁾

-I_DM

P_D

Power Dissipation ²⁾

℃

Operating Junction and Storage Temperature Range

T_J,T_stg

- 55 to + 150

Thermal Resistance Ratings

Parameter

Symbol

R_θJA

Value

125

Unit

Thermal Resistance from Junction to Ambient ²⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

℃/W

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 6

Dated: 31/08/2023 Rev:01

12 3 4 5 6

中文翻译

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