Datasheet > MMZ02N023US

MMZ02N023US

更新时间： 2024-11-17 14:55:47

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
6页	444K
描述
小信号金氧半電晶體

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数据手册

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MMZ02N023US 数据手册

MMZ02N023US

N-Channel Enhancement Mode MOSFET

Drain

Features

6 D

5 D

4 S

D 1

D 2

G 3

• Low voltage gate drive

• Surface-mounted package

Gate

1. Drain 2. Drain 3. Gate

4. Sourse 5. Drain 6. Drain

DFN2020-6HA Plastic Package

Source

Applications

• Portable appliances

• Battery management

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter Symbol

Value

Unit

Drain-Source Voltage

Drain-Gate Voltage

V_DSS

V_GS

I_D

± 12

Drain Current - Continuous

Drain Current - Pulsed ¹⁾

Total Power Dissipation ²⁾

I_DM

P_tot

2.8

℃

t ≤ 10 s

Operating Junction and Storage Temperature Range

T_j, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

Unit

t ≤ 10 s

Steady-State

Thermal Resistance from Junction to Ambient ²⁾

℃/W

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 6

Dated: 25/08/2023 Rev:01

12 3 4 5 6

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