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MMDP-67206E-15/883 PDF预览

MMDP-67206E-15/883

更新时间: 2023-01-02 18:27:59
品牌 Logo 应用领域
TEMIC 先进先出芯片光电二极管
页数 文件大小 规格书
16页 105K
描述
FIFO, 16KX9, 15ns, Asynchronous, CMOS, PDFP28, 400 MIL, FLAT PACK, 28 PIN

MMDP-67206E-15/883 数据手册

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M67206E  
16 K 9 High Speed CMOS Parallel FIFO Rad Tolerant  
Introduction  
The M67206E implements a first-in first-out algorithm, Using an array of eight transistors (8 T) memory cell, the  
featuring asynchronous read/write operations. The FULL M67206E combine an extremely low standby supply  
and EMPTY flags prevent data overflow and underflow. current (typ = 0.1 µA) with a fast access time at 15 ns  
The Expansion logic allows unlimited expansion in word over the full temperature range. All versions offer battery  
size and depth with no timing penalties. Twin address backup data retention capability with a typical power  
pointers automatically generate internal read and write consumption at less than 2 µW.  
addresses, and no external address information are  
The M67206E is processed according to the methods of  
required for the TEMIC FIFOs. Address pointers are  
the latest revision of the MIL STD 883 (class B or S), ESA  
automatically incremented with the write pin and read  
SCC 9000 or QML.  
pin. The 9 bits wide data are used in data communications  
applications where a parity bit for error checking is  
necessary. The Retransmit pin reset the Read pointer to  
zero without affecting the write pointer. This is very  
useful for retransmitting data when an error is detected in  
the system.  
Features  
D First-in first-out dual port memory  
D 16384 × 9 organisation  
D Fully expandable by word width or depth  
D Asynchronous read/write operations  
D Empty, full and half flags in single device mode  
D Retransmit capability  
D Fast Flag and access times: 15, 30 ns  
D Wide temperature range : – 55 °C to + 125 °C  
D Bi-directional applications  
D Battery back-up operation : 2 V data retention  
D TTL compatible  
D Single 5 V ± 10 % power supply  
D High Performance SCMOS Technology  
1
Rev. C – June 30, 1999  

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