Datasheet > 存储 > SRAM> MMDJ-65609EV-40

MMDJ-65609EV-40

更新时间： 2024-02-23 20:27:36

品牌	Logo	应用领域
爱特美尔 - ATMEL		静态存储器
页数	文件大小	规格书
14页	250K
描述
Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

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技术参数
数据手册

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MMDJ-65609EV-40 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.77
Is Samacsys：	N	Base Number Matches：	1

MMDJ-65609EV-40 数据手册

Features

• Operating Voltage: 3.3V

• Access Time: 40 ns

• Very Low Power Consumption

– Active: 180 mW (Max)

– Standby: 70 µW (Typ)

• Wide Temperature Range: -55°C to +125°C

• 400 Mils Width Package

• TTL Compatible Inputs and Outputs

• Asynchronous

• Designed on 0.35 Micron Process

• Latch-up Immune

• 200 Krads capability

Rad. Hard

128K x 8

• SEU LET Better Than 3 MeV

3.3-volt

Description

Very Low Power

CMOS SRAM

The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits.

Atmel brings the solution to applications where fast computing is as mandatory as low

consumption, such as aerospace electronics, portable instruments, or embarked

systems.

Utilizing an array of six transistors (6T) memory cells, the M65609E combines an

extremely low standby supply current (Typical value = 20 µA) with a fast access time

at 40 ns over the full military temperature range. The high stability of the 6T cell pro-

vides excellent protection against soft errors due to noise.

M65609E

The M65609E is processed according to the methods of the latest revision of the MIL

STD 883 (class B or S), ESA SCC 9000 or QML.

It is produced on the same process as the MH1RT sea of gates series.

Rev. 4158D–AERO–06/02

12 3 4 5 6 7...14

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