Datasheet > MMDJ-65608EV-30-E

MMDJ-65608EV-30-E

更新时间： 2024-09-25 20:33:43

品牌	Logo	应用领域
TEMIC		静态存储器光电二极管内存集成电路
页数	文件大小	规格书
12页	246K
描述
SRAM,

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技术参数
数据手册

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MMDJ-65608EV-30-E 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.79
Is Samacsys：	N	Base Number Matches：	1

MMDJ-65608EV-30-E 数据手册

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Features

• Operating voltage: 5V

• Access time: 30, 45ns

• Very low power consumption

– active: 250mW (Typ)

– standby: 1 µW (Typ)

– data retention: 0.5 µW (Typ)

• Wide temperature Range: -55°C to +125°C

• 400Mils width package

• TTL compatible inputs and outputs

• Asynchronous

• Single 5 volt supply

• Equal Cycle and access time

• Gated inputs:

– no pull-up/down

– resistors are required

• QML Q and V with SMD 5962-89598

Rad Tolerant

5V 128 K x 8

Very Low Power

CMOS SRAM

Description

The M65608E is a very low power CMOS static RAM organized as 131072 x 8bits.

M65608E

Atmel Wireless & Microcontrollers brings the solution to applications where fast com-

puting is as mandatory as low consumption, such as aerospace electronics, portable

instruments, or embarked systems.

Utilizing an array of six transistors (6T) memory cells, the M65608E combines an

extremely low standby supply current (Typical value= 20µA) with a fast access time at

30ns over the full military temperature range. The high stability of the 6T cell provides

excellent protection against soft errors due to noise.

The M65608E is processed according to the methods of the latest revision of the MIL

STD 883 (class B or S), ESA SCC 9000 or QML.

Rev. F–20-Aug-01

12 3 4 5 6 7...12

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