Datasheet > MMBZ27VDA-VGS08

MMBZ27VDA-VGS08

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
4页	73K
描述
DIODE 40 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, ROHS COMPLIANT PACKAGE-3, Transient Suppressor

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MMBZ27VDA-VGS08 数据手册

MMBZ27VDA-V

Vishay Semiconductors

www.vishay.com

Small Signal Zener Diodes, Dual

FEATURES

• Dual silicon planar Zener diodes with common

anode configurations

• Dual package provides for bidirectional or

separate unidirectional configurations

• The dual configurations protect two separate

lines with only one device

Common anode

• Peak power: 40 W at 1 ms (bidirectional)

• For bidirectional operation, circuit connected to pins 1 and

2. For unidirectional operation, circuit connected to pins 1

and 3 or pins 2 and 3

PRIMARY CHARACTERISTICS

PARAMETER

V_Zrange nom.

Test current I_ZT

V_Zspecification

Int. construction

VALUE

UNIT

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Pulse current

Dual

ORDERING INFORMATION

DEVICE NAME

ORDERING CODE

MMBZ27VDA-V-GS18

MMBZ27VDA-V-GS08

TAPED UNITS PER REEL

10 000 (8 mm tape on 13" reel)

3000 (8 mm tape on 7" reel)

MINIMUM ORDER QUANTITY

MMBZ27VDA-V

10 000

15 000

MMBZ27VDA-V

PACKAGE

MOLDING COMPOUND MOISTURE SENSITIVITY

SOLDERING

CONDITIONS

PACKAGE NAME

WEIGHT

8.8 mg

FLAMMABILITY RATING

LEVEL

MSL level 1

SOT-23

UL 94 V-0

260 °C/10 s at terminals

(according J-STD-020)

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Peak power dissipation ⁽¹⁾

P_PK

225

T_amb= 25 °C,

derate above 25 °C

Power dissipation on FR-5 board ⁽²⁾

P_tot

1.8

mW/K

300

T_amb= 25 °C,

derate above 25 °C

Power dissipation on alumina substrate ⁽³⁾

P_tot

2.4

mW/K

K/W

°C

Thermal resistance, junction to ambient air

Storage temperature range

R_thJA

556

T_j, T_stg

- 55 to + 150

Notes

(1)

(2)

(3)

Nonrepetitive current pulse per figure 2 and derate above T_amb= 25 °C per figure 3

FR-5 = 1" x 0.75" x 0.62"

Alumina = 0.4" x 0.3" x 0.024", 99.5 % alumina.

Rev. 1.2, 14-Sep-11

Document Number: 81294

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与MMBZ27VDA-VGS08相关器件

型号	品牌	获取价格	描述	数据表
MMBZ27VDA-VGS18	VISHAY	获取价格	DIODE 40 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, ROHS COMPLIANT PACKAGE-3, Transi
MMBZ27VDC	VISHAY	获取价格	Small Signal Zener Diodes, Dual
MMBZ27VDC/E9	VISHAY	获取价格	Trans Voltage Suppressor Diode, 40W, 22V V(RWM), Unidirectional, 2 Element, Silicon, TO-23
MMBZ27VDC-V	VISHAY	获取价格	DIODE 225 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, LEAD FREE, SOT-23, PLASTIC, 3 P
MMBZ27VDG	NXP	获取价格	Double ESD protection diodes for transient overvoltage suppression
MMBZ27VU-A	NEXPERIA	获取价格	TVS device for surge protection of interface and supply linesProduction
MMBZ27VUA-Q	NEXPERIA	获取价格	TVS device for surge protection of interface and supply linesProduction
MMBZ30VALFH	ROHM	获取价格	Transient Voltage suppressor
MMBZ30VALY	ROHM	获取价格	MMBZ30VALY以高抗浪涌性为特点的瞬态抑制二极管，适合电子元器件的接口保护。
MMBZ30VALYFH	ROHM	获取价格	MMBZ30VALYFH以高抗浪涌性为特点的瞬态抑制二极管，适合电子元器件的接口保护。是符

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