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MLCE100E3 PDF预览

MLCE100E3

更新时间: 2024-09-25 19:37:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
5页 344K
描述
Trans Voltage Suppressor Diode, 1500W, 100V V(RWM), Unidirectional, 1 Element, Silicon,

MLCE100E3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-PALF-W2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.59其他特性:HIGH RELIABILITY, LOW CAPACITANCE
最大击穿电压:128.7 V最小击穿电压:105.3 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:1.52 W
参考标准:IEC-61000-4-2, 4-4, 4-5; MIL-19500最大重复峰值反向电压:100 V
表面贴装:NO技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MLCE100E3 数据手册

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