生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-XUFM-X24 |
Reach Compliance Code: | unknown | 风险等级: | 5.81 |
Is Samacsys: | N | 最大集电极电流 (IC): | 50 A |
集电极-发射极最大电压: | 600 V | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X24 | 元件数量: | 1 |
端子数量: | 24 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 最大功率耗散 (Abs): | 200 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | VCEsat-Max: | 2.7 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MIG50Q201H | TOSHIBA |
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High Power Switching Applications Motor Control Applications | |
MIG50Q6CSB1X | TOSHIBA |
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TOSHIBA Intelligent Power Module Silicon N Channel IGBT | |
MIG50Q7CSA0X | TOSHIBA |
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TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT | |
MIG50Q7CSB1X | TOSHIBA |
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High Power Switching Applications Motor Control Applications | |
MIG5Q805H | TOSHIBA |
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TRANSISTOR 5 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | |
MIG600J2CMB1W | TOSHIBA |
获取价格 |
Intelligent Power Module Silicon N Channel IGBT | |
MIG600J2CMB1W | MITSUBISHI |
获取价格 |
High Power Switching Applications Motor Control Applications | |
MIG75J101H | TOSHIBA |
获取价格 |
Silicon N Channel IGBT | |
MIG75J201H | TOSHIBA |
获取价格 |
TOSHIBA Intelligent Power Module Silicon N Channel IGBT | |
MIG75J201HC | TOSHIBA |
获取价格 |
暂无描述 |