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2N5661

更新时间: 2024-01-26 06:44:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率双极晶体管局域网
页数 文件大小 规格书
3页 69K
描述
NPN POWER SILICON TRANSISTOR

2N5661 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.56
Is Samacsys:N最大集电极电流 (IC):1 A
配置:Single最小直流电流增益 (hFE):25
最高工作温度:200 °C极性/信道类型:NPN
最大功率耗散 (Abs):20 W子类别:Other Transistors
表面贴装:NO标称过渡频率 (fT):20 MHz
Base Number Matches:1

2N5661 数据手册

 浏览型号2N5661的Datasheet PDF文件第2页浏览型号2N5661的Datasheet PDF文件第3页 
TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 454  
Devices  
Qualified Level  
JAN, JANTX  
JANTXV  
2N5660  
2N5661  
2N5662  
2N5663  
MAXIMUM RATINGS  
Ratings  
2N5660 2N5661  
2N5662 2N5663  
Symbol  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Base Current  
200  
250  
250  
300  
400  
400  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
VCEO  
VCBO  
VCER  
VEBO  
IB  
6.0  
0.5  
2.0  
TO-66*  
(TO-213AA)  
2N5660, 2N5661  
Collector Current  
IC  
2N5660 2N5662  
2N5661 2N5663  
Total Power Dissipation  
@ TA = +250C  
@ TC = +1000C  
2.0(1)  
20(3)  
1.0(2)  
15(4)  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
2N5660  
2N5661  
2N5662  
2N5663  
Characteristics  
Symbol  
Unit  
TO-5*  
2N5662, 2N5663  
R
R
Thermal Resistance, Junction-to-Case  
Junction-to-Ambient  
qJC  
0C/W  
5.0  
87.5  
6.67  
145.8  
qJA  
1) Derate linearly 11.4 mW/0C for TA >+ 250C  
2) Derate linearly 5.7 mW/0C for TA > +250C  
3) Derate linearly 200 mW/0C for TC > +1000C  
4) Derate linearly 150 mW/0C for TC > +1000C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc  
200  
300  
Vdc  
2N5660, 2N5662  
2N5661, 2N5663  
V(BR)  
CEO  
Collector-Base Breakdown Voltage  
250  
400  
Vdc  
Vdc  
IC = 10 mAdc, RBE = 100W  
2N5660, 2N5662  
2N5661, 2N5663  
V(BR)  
CER  
Emitter-Base Breakdown Voltage  
IE = 10 mAdc  
6.0  
V(BR)  
EBO  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

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