Datasheet > MHU07N65

MHU07N65

更新时间： 2024-09-26 01:25:59

品牌	Logo	应用领域
竹懋 - CITC		/
页数	文件大小	规格书
10页	1650K
描述
Silicon N-Channel Power MOSFET

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中文翻译

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MHU07N65 数据手册

MHU07N65

Chip Integration Technology Corporation

Silicon N-Channel Power MOSFET

Main Product Characteristics

■ Outline

TO-251

I_D

V_DSS

P_D(T_C=25^oC)

650V

95W

1.1Ω

R_DS(ON)Typ

■ Features

• Fast switching.

• ESD improved capability.

• Low gate charge. (Typical Data:24nC)

• Low reverse transfer capacitances.(Typical:4.5pF)

• 100% single pulse avalanche energy test.

1.Gate 2.Drain 3.Source

Drain

■ Application

• Power switch circuit of adaptor and charger.

■ Mechanical data

Gate

• Epoxy:UL94-V0 rated flame retardant

• Case : JEDEC TO-251 molded plastic body over

passivated chip

• Lead : Axial leads, solderable per MIL-STD-202,

Method 208 guranteed.

Source

Inner Equivalent principium Chart

■ Absolute(T_C= 25^OC unless otherwise specified)

Symbol

V_DSS

PARAMETER

CONDITIONS

MHU07N65

UNIT

Drain-to-Source Voltage

650

Continuous Drain Current

I_D

T_C= 100^OC

Continuous Drain Current

4.5

I_DM

V_GS

E_AS

I_AR

Pulsed Drain Current(Note:1)

Gate-to-Source Voltage

±30

Single Pulse Avalanche Energy(Note:2)

Avalanche Current(Note:1)

450

3.3

Avalanche Energy, Repetitive(Note:1)

E_AR

Power Dissipation

Derating factor above 25^OC

0.76

Power Dissipation

P_D

W/^OC

V/ns

^OC

Peak Diode Recovery dv/dt(Note:3)

Gate source ESD

dV/dt

V_ESD(G-S)

T_J, T_STG

T_L

5.0

HBM-C = 100pF, R = 1.5kΩ

3000

Operating Junction and Storage Temperature Range

Maximum temperature for soldering

150,-55 ~ +150

300

NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature.

2.L=10.0mH, I_D= 6.3A, Start T_J= 25^OC.

3.I_SD=4A,di/dt ≤100A/µs, V_DD≤BV_DS, Start T_J= 25^OC.

Document ID : DS-22M75

Revised Date : 2015/08/24

Revision : C

12 3 4 5 6 7...10

中文翻译

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