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MGS13002DD

更新时间： 2024-09-27 03:49:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体双极型晶体管栅
页数 文件大小 规格书
6页 111K
描述
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

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Order this document  
by MGS13002D/D  
SEMICONDUCTOR TECHNICAL DATA  
N–Channel Enhancement–Mode Silicon Gate  
This IGBT contains a built–in free wheeling diode and a gate  
protection zener diodes. Fast switching characteristics result in  
efficient operation at higher frequencies. This device is ideally  
suited for high frequency electronic ballasts.  
IGBT  
0.5 A @ 25°C  
600 V  
•
•
•
•
Built–In Free Wheeling Diodes  
Built–In Gate Protection Zener Diode  
Industry Standard Package (TO92 — 1.0 Watt)  
High Speed E : Typical 6.5 J @ I = 0.3 A; T = 125°C and  
off  
C
C
dV/dt = 1000 V/ s  
•
•
Robust High Voltage Termination  
Robust Turn–Off SOA  
C
E
C
G
G
CASE 029–05  
STYLE 35  
E
TO–226AE  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Parameters  
Symbol  
Value  
600  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
V
CES  
Collector–Gate Voltage (R  
GE  
= 1.0 MΩ)  
V
CGR  
600  
Gate–Emitter Voltage — Continuous  
V
GES  
± 15  
Collector Current — Continuous @ T = 25°C  
Collector Current — Continuous @ T = 90°C  
Collector Current — Repetitive Pulsed Current (1)  
I
I
0.5  
0.3  
2.0  
C
C
C25  
C90  
I
CM  
Total Power Dissipation @ T = 25°C  
P
D
1.0  
Watt  
C
Operating and Storage Junction Temperature Range  
T , T  
–55 to 150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction to Case – IGBT  
Thermal Resistance — Junction to Ambient  
R
R
25  
125  
°C/W  
°C  
θJC  
θJA  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds  
T
260  
L
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (T ≤ 150°C)  
C
Single Pulse Drain–to–Source Avalanche  
E
AS  
mJ  
Energy – Starting @ T = 25°C  
125  
40  
C
Energy – Starting @ T = 125°C  
C
V
CE  
= 100 V, V  
= 15 V, Peak I = 2.0 A, L = 3.0 mH, R = 25  
L G  
GE  
(1) Pulse width is limited by maximum junction temperature repetitive rating.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Designer’s is a trademark of Motorola, Inc.  
REV 2  
Motorola, Inc. 1998  
123456

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