MCG55P02A
Features
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Trench Power LV MOSFET Technology
Excellent Package for Heat Dissipation
High Density Cell Design for Low RDS(ON)
Moisture Sensitivity Level 1
P-CHANNEL
Halogen Free. “Green” Device (Note 1)
MOSFET
Epoxy Meets UL 94 V-0 Flammability Rating
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
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Operating Junction Temperature Range : -55°C to +150°C
Storage Temperature Range: -55°C to +150°C
DFN3333
Thermal Resistance: 39°C/W Junction to Ambient(Note2)
Thermal Resistance: 3.2°C/W Junction to Case
B
Parameter
Rating
-20
Symbol
VDS
Unit
V
Drain-Source Voltage
Gate-Source Volltage
A
VGS
±10
V
-55
TC=25°C
A
Continuous Drain Current
Pulsed Drain Current(Note3)
ID
TC=100°C
-35
-160
39
H
IDM
PD
A
W
E
e
Total Power Dissipation(Note4)
Single Pulsed Avalanche Energy(Note5)
Note:
D
EAS
98
mJ
1
F
1. Halogen free "Green” products are defined as those which contain <900ppm bromine,
G
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
2. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based
on RθJA tʇꢀ10s and the maximum allowed junction temperature of 150°C. The value in
any given application depends on the user's specific board design.
C
C2
C1
DIMENSIONS
MM
MIN MAX MIN MAX
0.126 0.130 3.20 3.30
0.126 0.130 3.20 3.30
0.030 0.033 0.75 0.85
3. Repetitive rating; pulse width limited by max. junction temperature.
4. PD is based on max. junction temperature, using junction-case thermal resistance.
5. TJ=25ǔ, VDD=-20V, VGS=-8V, L=1mH
INCHES
DIM
NOTE
A
B
C
C1 0.007 0.009 0.18 0.22
Internal Structure and Marking Code
C2
D
E
---
0.002
---
0.05
0.071 0.079 1.80 2.00
0.087 0.098 2.20 2.50
0.016 0.020 0.40 0.50
0.010 0.014 0.25 0.35
0.012 0.016 0.30 0.40
0.024 0.028 0.60 0.70
D
D
D
D
8
7
6
5
F
MCC
MCG55P02A
G
H
e
1
2
3
4
S
S
S
G
pin1
Rev.4-1-05262023
1/6
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