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MCG60N06YHE3 PDF预览

MCG60N06YHE3

更新时间: 2024-11-10 14:55:23
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
6页 918K
描述
Tape&Reel:5Kpcs/Reel;

MCG60N06YHE3 数据手册

 浏览型号MCG60N06YHE3的Datasheet PDF文件第2页浏览型号MCG60N06YHE3的Datasheet PDF文件第3页浏览型号MCG60N06YHE3的Datasheet PDF文件第4页浏览型号MCG60N06YHE3的Datasheet PDF文件第5页浏览型号MCG60N06YHE3的Datasheet PDF文件第6页 
MCG60N06YHE3  
Features  
AEC-Q101 Qualified  
Split Gate Trench MOSFET Technology  
High Density Cell Design For Ultra Low RDS(on)  
Moisture Sensitivity Level 3  
Halogen Free."Green"Device(Note1)  
Epoxy Meets UL 94 V-0 Flammability Rating  
N-CHANNEL  
MOSFET  
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS  
Compliant. See Ordering Information)  
Maximum Ratings  
Operating Junction Temperature Range : -55°C to +175°C  
Storage Temperature Range: -55°C to +175°C  
Thermal Resistance: 60°C/W Junction to Ambient(Note2)  
DFN3333  
Thermal Resistance: 2.5°C/W Junction to Case  
Parameter  
Rating  
60  
Symbol  
VDS  
Unit  
V
B
Drain-Source Voltage  
Gate-Source Volltage  
VGS  
±20  
60  
V
TC=25°C  
A
Continuous Drain Current  
ID  
A
TC=100°C  
42  
Pulsed Drain CurrentNote3)  
IDM  
PD  
240  
60  
A
W
H
7RWDOꢃ3RZHUꢃ'LVVLSDWLRQNoteꢏꢌ  
Single Pulse Avalanche Energy (Note 5)  
EAS  
144  
mJ  
E
1RWHꢀ  
D
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1
F
e
G
C
C2  
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ꢊꢂ 7- ꢍꢊǔꢈꢃ9'' 409ꢈꢃR* 25Ωꢈꢃ/ 1P+.  
C1  
DIMENSIONS  
MM  
MIN MAX MIN MAX  
0.126 0.130 3.20 3.30  
0.126 0.130 3.20 3.30  
0.030 0.033 0.75 0.85  
INCHES  
DIM  
NOTE  
A
B
C
Internal Structure and Marking Code  
C1 0.007 0.009 0.18 0.22  
D
D
D
D
8
7
6
5
C2  
D
E
---  
0.002  
---  
0.05  
0.071 0.079 1.80 2.00  
0.087 0.098 2.20 2.50  
0.016 0.020 0.40 0.50  
0.010 0.014 0.25 0.35  
0.012 0.016 0.30 0.40  
0.024 0.028 0.60 0.70  
4 codes in total  
YY is the year  
WW is the week  
MCC  
MCG60N06Y  
YYWW  
F
G
H
e
1
2
3
4
S
S
S
G
pin1  
Rev.4-1-07032023  
1/6  
MCCSEMI.COM  

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