Datasheet > MBRF7H45-HE3/45

MBRF7H45-HE3/45

更新时间： 2023-01-02 17:45:24

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	134K
描述
DIODE 7.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN, Rectifier Diode

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MBRF7H45-HE3/45 数据手册

New Product

MBR(F,B)7H35 thru MBR(F,B)7H60

Vishay General Semiconductor

Schottky Barrier Rectifier

High Barrier Technology for Improved High Temperature Performance

FEATURES

ITO-220AC

TO-220AC

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

MBR7Hxx

PIN 1

MBRF7Hxx

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

PIN 1

CASE

PIN 2

• Solder dip 260 °C, 40 s (for TO-220AC and

ITO-220AC package)

TO-263AB

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

MBRB7Hxx

For use in low voltage, high frequency rectifier of

switching mode power supplies, freewheeling diodes,

dc-to-dc converters or polarity protection application.

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

Case: TO-220AC, ITO-220AC, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

PRIMARY CHARACTERISTICS

I_F(AV)

7.5 A

V_RRM

I_FSM

V_F

35 V to 60 V

150 A

0.55 V, 0.61 V

50 µA

I_R

T_Jmax.

175 °C

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL MBR7H35 MBR7H45 MBR7H50 MBR7H60

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

V_RRM

V_RWM

V_DC

Maximum DC blocking voltage

Max. average forward rectified current (Fig. 1)

Non-repetitive avalanche energy at 25 °C, I_AS= 4 A, L = 10 mH

I_F(AV)

E_AS

7.5

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

150

Peak repetitive reverse surge current at t_p= 2.0 µs, 1 kHz

Peak non-repetitive reverse energy (8/20 µs waveform)

I_RRM

1.0

0.5

E_RSM

Electrostatic discharge capacitor voltage human body model:

C = 100 pF, R = 1.5 kΩ

V_C

Voltage rate of change (rated V_R)

dV/dt

10 000

V/µs

Document Number: 88796

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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与MBRF7H45-HE3/45相关器件

型号	品牌	获取价格	描述	数据表
MBRF7H50	VISHAY	获取价格	Schottky Barrier Rectifier
MBRF7H50/45-E3	VISHAY	获取价格	DIODE 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC, ITO-220AC, 2 PIN, Rectifie
MBRF7H60	VISHAY	获取价格	Schottky Barrier Rectifier
MBRF7H60/45-E3	VISHAY	获取价格	DIODE 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC, ITO-220AC, 2 PIN, Rectifie
MBRF7H60-E3	VISHAY	获取价格	DIODE 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC, ITO-220AC, 2 PIN, Rectifie
MBRF7H60HE3/45	VISHAY	获取价格	DIODE 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC,
MBRF7H60-HE3/45	VISHAY	获取价格	DIODE 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC,
MBRF7HXX		获取价格	Schottky Barrier Rectifiers
MBRF8100	DACHANG	获取价格	Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 8.0 A
MBRF8100	BL Galaxy Electrical	获取价格	SCHOTTKY BARRIER RECTIFIER

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