SEMICONDUCTOR
MBRD20U200CT
SCHOTTKY BARRIER TYPE DIODE
TECHNICAL DATA
SWITCHING MODE POWER SUPPLY APPLICATION.
CONVERTER & CHOPPER APPLICATION.
FEATURES
A
C
K
DIM MILLIMETERS
· Average Output Rectified Current
: IO=20A.
L
D
B
_
A
B
C
D
E
6.60 + 0.20
_
6.10+0.20
_
5.34 + 0.30
· Repetitive Peak Reverse Voltage
: VRRM=200V.
_
0.70+0.20
_
2.70 + 0.15
_
2.30+0.10
F
0.96 MAX
0.90 MAX
G
H
J
· Fast Reverse Recovery Time : trr=35ns.
H
J
_
1.80+0.20
E
_
2.30+0.10
K
L
G
N
_
0.50 + 0.10
_
F
F
M
M
N
O
0.50+0.10
0.70 MIN
0.1 MAX
MAXIMUM RATING (Ta=25℃)
1
2
3
1. ANODE
2. CATHODE
3. ANODE
CHARACTERISTIC
SYMBOL
VRRM
RATING
200
UNIT
V
O
Repetitive Peak Reverse Voltage
Average Output Rectified
Current (Note)
IO
20
A
A
DPAK (1)
Peak One Cycle Surge Forward
Current (Non-Repetitive 60Hz)
IFSM
150
Tj
Junction Temperature
-40∼ 150
-55∼ 150
℃
℃
Tstg
Storage Temperature Range
CATHODE
2
Note : average forward current of centertap full wave connection.
1
3
ANODE ANODE
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
VFM
TEST CONDITION
IFM=10A
MIN.
-
TYP.
-
MAX.
0.95
UNIT
Peak Forward Voltage
(Note)
V
Repetitive Peak
Reverse Current
IRRM
VRRM=Rated
-
-
50
㎂
(Note)
(Note)
trr
Reverse Recovery Time
Thermal Resistance
IF=1.0A, di/dt=-30A/㎲
-
-
-
-
35
6
ns
Rth(j-c)
(Note)
Junction to Case
℃/W
Note : A value of one cell
2016. 04. 29
Revision No : 0
1/2