Datasheet > MBRB746HE3_B/I

MBRB746HE3_B/I

更新时间： 2024-02-18 14:01:54

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
5页	87K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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MBRB746HE3_B/I 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.72
二极管类型：	RECTIFIER DIODE	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	245
端子面层：	MATTE TIN	处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

MBRB746HE3_B/I 数据手册

MBRB7xx

Vishay General Semiconductor

www.vishay.com

Schottky Barrier Rectifier

FEATURES

D²PAK (TO-263AB)

• Power pack

• Guardring for overvoltage protection

• Low power loss, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 245 °C

MBRB7xx

PIN 1

PIN 2

• AEC-Q101 qualified

HEATSINK

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of switching

mode power supplies, freewheeling diodes, DC/DC

converters, and polarity protection application.

PRIMARY CHARACTERISTICS

I_F(AV)

7.5 A

V_RRM

I_FSM

45, 60 V

150 A

MECHANICAL DATA

Case: D²PAK (TO-263AB)

V_F

0.57 V, 0.65 V

150 °C

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified

(“_X” denotes revision code, e.g. A, B, ...)

T_Jmax.

Package

Circuit configuration

D²PAK (TO-263AB)

Single

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: as marked

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

V_RWM

V_DC

MBRB745

MBRB760

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

Maximum average forward rectified current (fig. 1)

Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load

Peak repetitive reverse surge current at t_p= 2.0 μs, 1 kHz

Voltage rate of change (rated V_R)

I_F(AV)

I_FSM

7.5

150

I_RRM

1.0

0.5

dV/dt

T_J

10 000

V/μs

°C

Operating junction temperature range

-65 to +150

-65 to +175

Operating storage temperature range

T_STG

Revision: 26-Sep-2018

Document Number: 87594

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与MBRB746HE3_B/I相关器件

型号	品牌	获取价格	描述	数据表
MBRB746HE3_B/P	VISHAY	获取价格	Rectifier Diode,
MBRB750	VISHAY	获取价格	SCHOTTKY RECTIFIER
MBRB750/31	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 7.5A, 50V V(RRM),
MBRB750/45	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 7.5A, 50V V(RRM), Silicon, TO-263AB, PLASTI
MBRB750-E3/45	VISHAY	获取价格	DIODE SCHOTTKY 50V 7.5A TO263AB
MBRB750-E3/81	VISHAY	获取价格	DIODE 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3,
MBRB750HE3/45	VISHAY	获取价格	DIODE 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3,
MBRB750-HE3/45	VISHAY	获取价格	DIODE 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3,
MBRB750HE3/81	VISHAY	获取价格	DIODE 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3,
MBRB750HE3_A/I	VISHAY	获取价格	Rectifier Diode,

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