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MBRB760-HE3/45 PDF预览

MBRB760-HE3/45

更新时间： 2024-02-15 23:30:44
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 481K
描述
DIODE 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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MBRB760-HE3/45 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：D2PAK
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-3针数：3
Reach Compliance Code：unknown风险等级：5.66
Base Number Matches：1

MBRB760-HE3/45 数据手册

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MBR(F,B)735 thru MBR(F,B)760  
Vishay General Semiconductor  
Schottky Barrier Rectifier  
FEATURES  
TO-220AC  
ITO-220AC  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
2
2
1
1
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
MBR7xx  
MBRF7xx  
PIN 1  
PIN 1  
CASE  
• Solder dip 260 °C, 40 s (for TO-220AC and  
ITO-220AC package)  
PIN 2  
PIN 2  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
2
TYPICAL APPLICATIONS  
1
For use in low voltage, high frequency rectifier of  
switching mode power supplies, freewheeling diodes,  
dc-to-dc converters or polarity protection application.  
MBRB7xx  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AC, ITO-220AC, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
7.5 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
VRRM  
IFSM  
35 V to 60 V  
150 A  
VF  
0.57 V, 0.65 V  
150 °C  
TJ max.  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL MBR735  
MBR745  
MBR750  
MBR760  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current (Fig. 1)  
IF(AV)  
7.5  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
TJ  
1.0  
0.5  
A
V/µs  
°C  
10 000  
Operating junction temperature range  
Storage temperature range  
- 65 to + 150  
- 65 to + 175  
TSTG  
°C  
Isolation voltage (ITO-220AC only)  
from terminal to heatsink t = 1 min  
VAC  
1500  
V
Document Number: 88680  
Revision: 08-Nov-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
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与MBRB760-HE3/45相关器件

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MBRB760-HE3/81 VISHAY

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MBRB7H35/31 VISHAY

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