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MBRB2550CT PDF预览

MBRB2550CT

更新时间： 2024-02-07 23:10:41
品牌 Logo 应用领域
SSC 整流二极管
页数 文件大小 规格书
3页 546K
描述
25A Dual Schottky Rectifiers

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中文翻译

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MBRB2550CT 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.76Is Samacsys：N
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.75 V
最大非重复峰值正向电流：150 A最高工作温度：150 °C
最大输出电流：30 A最大重复峰值反向电压：50 V
子类别：Rectifier Diodes表面贴装：YES
Base Number Matches：1

MBRB2550CT 数据手册

 浏览型号MBRB2550CT的Datasheet PDF文件第2页浏览型号MBRB2550CT的Datasheet PDF文件第3页 
MBR/B25xxCT Series  
25A Dual Schottky Rectifiers  
PRODUCT SUMMARY  
Voltage ratings available from 35 to 60 Volts  
FEATURES  
Plastic packages have Underwriters Laboratory Flammability  
Classification 94V-0  
Dual rectifier construction, positive center tap  
Metal-silicon junction, majority carrier conduction  
Low power loss, high efficiency  
Guard-ring for overvoltage protection  
For use in low voltage, high frequency inverters, free wheeling,  
and polarity protection applications  
MECHANICAL DATA  
High temperature soldering guaranteed:  
250°C for 10 seconds, 0.25" (6.35mm) from case  
Case: JEDEC TO-220AB (MBR...) or ITO-220AB (MBRB...) molded plastic body - for dimensions, see page 3  
Terminals: Matte-Sn plated leads, solderable per MIL-STD-750, method 2026  
Polarity: As marked  
Mounting Position: Any  
Mounting Torque: 10 in-lbs maximum  
Weight: 0.08 ounce, 2.24 grams  
Pb-free; RoHS-compliant  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR2535CT MBR2545CT MBR2550CT MBR2560CT  
MBRB2535CT MBRB2545CT MBRB2550CT MBRB2560CT  
Parameter  
Symbol  
Units  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
Volts  
Volts  
Volts  
Maximum DC blocking voltage  
Maximum average forward  
rectified current at TC=130°C  
Total device  
Per leg  
25  
12.5  
IF(AV)  
IFRM  
IFSM  
Amps  
Amps  
Amps  
Peak repetitive forward current per leg at (rated VR, sq.  
30  
wave 20kHz) at TC=130oC  
Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method) per leg  
150  
Peak repetitive reverse surge current per leg at tp =  
IRRM  
1.0  
0.5  
Amps  
2.0 su,  
1KHz  
Voltage rate of change (rated VR)  
dv/dt  
10,000  
V/ us  
Maximum instantaneous forward voltage per leg (Note 1)  
at I F=12.5A, T =25°C  
-
0.75  
c
at IF=12.5A, T =125°C  
VF  
-
0.65  
Volt  
c
at I F=25A, T =25° C  
0.82  
0.73  
-
-
c
at IF=25A, T =125°C  
c
Maximum reverse current at  
rated DC blocking voltage  
per leg (Note 1)  
TC=25oC  
0.2  
40  
1.0  
50  
mA  
IR  
TC=125o C  
Thermal resistance from junction to case per leg  
Rθ  
1.5  
°C/W  
JC  
Operating junction temperature range  
Storage temperature range  
TJ  
-55 to +150  
-55 to +150  
oC  
oC  
TSTG  
Notes:  
1. Pulse test: 300us pulse width, 1% duty cycle  
12/03/2006 Rev.4.01  
www.SiliconStandard.com  
1 of 3  
123

中文翻译

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 		DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC, 3 PIN, Rect
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 		DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC, 3 PIN, Rect
MBRB2550CTHE3/45 VISHAY

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 		DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC, 3 PIN, Rect
MBRB2550CT-HE3/45 VISHAY

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 		DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC, 3 PIN, Rect
MBRB2550CTHE3/81 VISHAY

获取价格

 		DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC, 3 PIN, Rect
MBRB2550CT-HE3/81 VISHAY

获取价格

 		DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC, 3 PIN, Rect

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