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MBRB2545CTHE3-A

更新时间： 2024-09-29 01:10:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 145K
描述
Dual Common Cathode Schottky Rectifier

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MBRB2545CTHE3-A 数据手册

 浏览型号MBRB2545CTHE3-A的Datasheet PDF文件第2页浏览型号MBRB2545CTHE3-A的Datasheet PDF文件第3页浏览型号MBRB2545CTHE3-A的Datasheet PDF文件第4页浏览型号MBRB2545CTHE3-A的Datasheet PDF文件第5页 
MBR25xxCT, MBRF25xxCT, MBRB25xxCT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Schottky Rectifier  
FEATURES  
TO-220AB  
ITO-220AB  
• Power pack  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
3
3
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
2
1
245 °C (for D2PAK (TO-263AB) package)  
1
MBR25xxCT  
MBRF25xxCT  
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for TO-220AB and ITO-220AB package)  
PIN 1  
PIN 2  
CASE  
PIN 1  
PIN 2  
PIN 3  
PIN 3  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3_A  
D2PAK (TO-263AB)  
K
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
2
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, or polarity protection application.  
1
MBRB25xxCT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB)  
Epoxy meets UL 94 V-0 flammability rating  
PRIMARY CHARACTERISTICS  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified  
(“_X” denotes revision code, e.g. A, B, ...)  
IF(AV)  
VRRM  
IFSM  
2 x 12.5 A  
35 V, 45 V  
150 A  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
VF  
0.73 V at 30 A  
TJ max.  
150 °C  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
TO-220AB, ITO-220AB, D2PAK  
(TO-263AB)  
Package  
Polarity: as marked  
Mounting Torque: 10 in-lbs maximum  
Circuit configuration  
Common cathode  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VRRM  
MBR2535CT  
MBR2545CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
35  
35  
35  
45  
45  
45  
VRWM  
VDC  
V
Maximum DC blocking voltage  
total device  
per diode  
25  
Maximum average forward rectified current  
at TC = 130 °C  
IF(AV)  
A
12.5  
Peak forward surge current 8.3 ms single half sine-wave superimposed on  
rated load per diode  
IFSM  
IRRM  
ERSM  
VC  
150  
1.0  
25  
A
Peak repetitive reverse surge current per diode  
at tp = 2 μs, 1 kHz  
Peak non-repetitive reverse energy (8/20 μs waveform)  
per diode  
mJ  
Electrostatic discharge capacitor voltage human body model: C = 100 pF,  
R = 1.5 kΩ  
25  
kV  
Voltage rate of change (rated VR)  
dV/dt  
TJ  
10 000  
V/μs  
Operating junction temperature range  
-65 to +150  
-65 to +175  
1500  
°C  
V
Storage temperature range  
TSTG  
VAC  
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min  
Revision: 14-Jun-17  
Document Number: 88675  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345

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