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MBRB20H60CTHE3_A/I

更新时间： 2024-11-28 14:34:31
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线二极管
页数 文件大小 规格书
5页 88K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-263AB,

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MBRB20H60CTHE3_A/I 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：R-PSSO-G2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.74其他特性：FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS
应用：EFFICIENCY外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.85 V
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
最大非重复峰值正向电流：150 A元件数量：2
相数：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：10 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED参考标准：AEC-Q101
最大重复峰值反向电压：60 V最大反向电流：100 µA
表面贴装：YES技术：SCHOTTKY
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MBRB20H60CTHE3_A/I 数据手册

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MBRB20H60CT  
Vishay General Semiconductor  
www.vishay.com  
Dual Common Cathode Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• Power pack  
TO-263AB  
K
• Guardring for overvoltage protection  
• Low power loss, high efficiency  
• Low forward voltage drop  
• Low leakage current  
2
• High forward surge capability  
• High frequency operation  
1
MBRB20H60CT  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C  
PIN 1  
K
PIN 2  
HEATSINK  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3_A  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
IF(AV)  
2 x 10 A  
VRRM  
60 V  
150 A  
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, and polarity protection application.  
IFSM  
VF  
0.61 V  
IR  
100 μA  
MECHANICAL DATA  
TJ max.  
Package  
Diode variations  
175 °C  
Case: TO-263AB  
TO-263AB  
Common cathode  
Molding compound meets UL 94 V-0 flammability rating  
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified  
(“_X” denotes revision code, e.g. A, B, ...)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: as marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
SYMBOL  
VRRM  
MBRB20H60CT  
UNIT  
60  
60  
60  
20  
10  
80  
VRWM  
VDC  
V
Maximum DC blocking voltage  
total device  
Maximum average forward rectified current (fig. 1)  
per diode  
IF(AV)  
A
Non-repetitive avalanche energy per diode at 25 °C, IAS = 4 A, L = 10 mH  
EAS  
mJ  
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load  
per diode  
IFSM  
150  
A
Peak repetitive reverse surge current per diode at tp = 2.0 μs, 1 kHz  
Peak non-repetitive reverse energy (8/20 μs waveform)  
IRRM  
0.5  
10  
ERSM  
mJ  
kV  
Electrostatic discharge capacitor voltage  
Human body model: C = 100 pF, R = 1.5 kΩ  
VC  
25  
Voltage rate of change (rated VR)  
dV/dt  
TJ, TSTG  
VAC  
10 000  
-65 to +175  
1500  
V/μs  
°C  
Operating junction and storage temperature range  
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min  
V
Revision: 14-Jun-17  
Document Number: 88787  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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