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MBRB2515LG PDF预览

MBRB2515LG

更新时间： 2024-11-28 11:56:51
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关
页数 文件大小 规格书
4页 60K
描述
SWITCHMODE Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package

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中文翻译

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MBRB2515LG 数据手册

 浏览型号MBRB2515LG的Datasheet PDF文件第2页浏览型号MBRB2515LG的Datasheet PDF文件第3页浏览型号MBRB2515LG的Datasheet PDF文件第4页 
MBRB2515L  
Preferred Device  
SWITCHMODEt  
ORing Function Diode  
Power Rectifier  
D2PAK Surface Mount Power Package  
2
The D PAK Power Rectifier employs the Schottky Barrier principle  
http://onsemi.com  
in a large metal−to−silicon power diode. State−of−the−art geometry  
features epitaxial construction with oxide passivation and metal  
overlay contact. Ideally suited for use in low voltage, high frequency  
switching power supplies, free wheeling diodes, and polarity  
protection diodes.  
SCHOTTKY BARRIER  
RECTIFIER  
25 AMPERES, 15 VOLTS  
Features  
• Guardring for Stress Protection  
• Low Forward Voltage  
1
4
3
• 100°C Operating Junction Temperature  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• Short Heat Sink Tab Manufactured − Not Sheared  
• Similar in Size to the Industry Standard TO−220 Package  
• Pb−Free Packages are Available  
4
1
Mechanical Characteristics:  
3
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0  
• Weight: 1.7 Grams (Approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
2
D PAK  
CASE 418B  
STYLE 3  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
• Device Meets MSL1 Requirements  
MARKING DIAGRAM  
• ESD Ratings: Machine Model, C (>400 V)  
Human Body Model, 3B (>8000 V)  
MAXIMUM RATINGS  
AY WW  
Rating  
Symbol  
Value  
Unit  
B2515LG  
AKA  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
15  
V
RRM  
V
RWM  
V
R
Average Rectified Forward Current  
I
25  
30  
A
A
F(AV)  
(Rated V , T = 90°C)  
R
C
Peak Repetitive Forward Current  
I
FRM  
(Rated V , Square Wave,  
R
A
Y
= Assembly Location  
= Year  
20 kHz, T = 100°C)  
C
WW  
= Work Week  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
150  
A
FSM  
B2515L = Device Code  
G
AKA  
= Pb−Free Package  
= Diode Polarity  
Storage Temperature Range  
T
−65 to +150  
100  
°C  
°C  
stg  
Operating Junction Temperature  
T
J
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Voltage Rate of Change (Rated V )  
dv/dt  
10,000  
V/ms  
R
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 6  
MBRB2515L/D  
1234

中文翻译

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MBRB2515LG 替代型号

型号 品牌 替代类型 描述 数据表
MBRB2515L ONSEMI

类似代替

 肖特基势垒整流器，15 V，25 A
MBRB2515LT4G ONSEMI

类似代替

 肖特基势垒整流器，15 V，25 A
STPS20L15G-TR STMICROELECTRONICS

功能相似

 LOW DROP OR-ing POWER SCHOTTKY DIODE

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