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MBRB20H90CTG-E3/45 PDF预览

MBRB20H90CTG-E3/45

更新时间： 2023-01-03 06:04:12
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 149K
描述
DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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MBRB20H90CTG-E3/45 数据手册

 浏览型号MBRB20H90CTG-E3/45的Datasheet PDF文件第2页浏览型号MBRB20H90CTG-E3/45的Datasheet PDF文件第3页浏览型号MBRB20H90CTG-E3/45的Datasheet PDF文件第4页浏览型号MBRB20H90CTG-E3/45的Datasheet PDF文件第5页 
MBR(F,B)20H90CTG thru MBR(F,B)20H100CTG  
Vishay General Semiconductor  
Dual Common-Cathode High-Voltage Schottky Rectifier  
High Barrier Technology for improved high temperature performance  
FEATURES  
TO-220AB  
ITO-220AB  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• High frequency operation  
3
3
2
2
1
MBR20H90CTG  
MBR20H100CTG  
1
MBRF20H90CTG  
MBRF20H100CTG  
• Meets MSL level 1, per J-STD-020C, LF max peak  
of 245 °C (for TO-263AB package)  
PIN 1  
PIN 2  
PIN 1  
PIN 2  
CASE  
PIN 3  
PIN 3  
• Solder Dip 260 °C, 40 seconds (for TO-220AB &  
ITO-220AB package)  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
2
TYPICAL APPLICATIONS  
1
MBRB20H90CTG  
MBRB20H100CTG  
For use in high frequency rectifier of switching  
mode power supplies, free-wheeling diodes, dc-to-dc  
converters or polarity protection application.  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
VF  
10 A x 2  
90 V, 100 V  
150 A  
0.70 V  
IR  
3.5 µA  
Polarity: As marked  
Tj max  
175 °C  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
MBR20H90CTG MBR20H100CTG  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
90  
90  
90  
100  
100  
100  
V
V
V
VRWM  
VDC  
Total device  
Maximum average forward rectified current at TC = 155 °C  
per diode  
20  
10  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
150  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dv/dt  
0.5  
A
10000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
Isolation voltage (ITO-220AB only)  
From terminal to heatsink t = 1 minute  
VAC  
1500  
V
Document Number 88856  
18-Aug-06  
www.vishay.com  
1
12345

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与MBRB20H90CTG-E3/45相关器件

型号 品牌 获取价格 描述 数据表
MBRB20H90CTG-HE3/45 VISHAY

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 		DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB20H90CTG-HE3/81 VISHAY

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 		DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB20H90CTHE3/45 VISHAY

获取价格

 		DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB20H90CT-HE3/45 VISHAY

获取价格

 		DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB20H90CTHE3/81 VISHAY

获取价格

 		DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB20H90CT-HE3/81 VISHAY

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 		DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB20HXXCT VISHAY

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 		Dual Schottky Barrier Rectifier
MBRB20xxCT VISHAY

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 		Dual Common Cathode Schottky Rectifier
MBRB25100 MCC

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 		25 Amp Schottky Barrier Rectifier 20 to 100 Volts
MBRB25100-BP MCC

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 		Rectifier Diode, Schottky, 1 Phase, 2 Element, 25A, 100V V(RRM), Silicon, D2PAK-3

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