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MBRB20H200CT PDF预览

MBRB20H200CT

更新时间： 2024-01-25 04:56:45
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 333K
描述
20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers

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MBRB20H200CT 数据手册

 浏览型号MBRB20H200CT的Datasheet PDF文件第2页 
MBRB20H100CT thru MBRB20H200CT  
MBRB20H100CT/MBRB20H150CT/MBRB20H200CT  
Pb Free Plating Product  
20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers  
Unit : inch (mm)  
D2PAK/TO-263AB  
ThinkiSemi Planar HMBR Technology  
¬
¬
¬
¬
¬
¬
Good Soft Recovery Characteristics  
Ideally Suited for Automatic Assembly  
Low Forward Voltage  
Features  
High Surge Current Capability  
Low Leakage Current  
Freewheeling, Snubber, Clamp  
¬
Inversion Welder  
¬
PFC  
¬
Applications  
Plating Power Supply  
¬
Ultrasonic Cleaner and Welder  
¬
Case  
Case  
Case  
Case  
Converter & Chopper  
¬
¬
Doubler  
Tandem Polarity Tandem Polarity  
Suffix "CTD" Suffix "CTS"  
Series  
Negative  
Common Cathode Common Anode  
Suffix "CT" Suffix "CTA"  
Positive  
UPS/LED SMPS/HID  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)  
PARAMETER  
SYMBOL  
MBRB20H100CT MBRB20H150CT MBRB20H200CT Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
70  
150  
105  
150  
20  
200  
140  
200  
V
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
IF(AV)  
Peak repetitive forward current  
(Rated VR, Square wave, 20KHz)  
IFRM  
20  
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
IRRM  
150  
A
A
Peak repetitive reverse surge current (Note 1)  
1
0.5  
Maximum instantaneous forward voltage (Note 2)  
IF=10A, TJ=25°C  
0.85  
0.75  
0.95  
0.85  
0.88  
0.75  
0.97  
0.85  
IF=10A, TJ=125°C  
VF  
V
IF=20A, TJ=25°C  
IF=20A, TJ=125°C  
TJ=25°C  
Maximum reverse current @ rated VR  
TJ=125°C  
5
2
μA  
mA  
V/μs  
°C/W  
°C  
IR  
Voltage rate of change (Rated VR)  
Typical thermal resistance  
10000  
dV/dt  
RθJC  
TJ  
1.5  
Operating junction temperature range  
Storage temperature range  
- 55 to +175  
- 55 to +175  
TSTG  
°C  
Note 1: tp = 2.0 μs, 1.0KHz  
Note 2: Pulse test with PW=300μs, 1% duty cycle  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  
12

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