Datasheet > MBR3060PTC0G

MBR3060PTC0G

更新时间： 2024-02-17 16:43:16

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	220K
描述
Dual Common Cathode Schottky Rectifier

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中文翻译

获取价格

数据手册

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MBR3060PTC0G 数据手册

MBR3035PT thru MBR30200PT

Taiwan Semiconductor

CREAT BY ART

Dual Common Cathode Schottky Rectifier

FEATURES

- Low power loss, high efficiency

- Guardring for overvoltage protection

- High surge current capability

- UL Recognized File # E-326243

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

TO-247AD (TO-3P)

MECHANICAL DATA

Case: TO-247AD (TO-3P)

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free

Base P/N with prefix "H" on packing code - AEC-Q101 qualified

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

with prefix "H" on packing code meet JESD 201 class 2 whisker test

Polarity: As marked

Mounting torque: 10 in-lbs maximum

Weight: 6.1 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

MBR MBR MBR MBR MBR MBR MBR MBR

PARAMETER

SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200 UNIT

100

150

105

150

200

140

200

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current

(Rated V_R, Square wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

I_RRM

200

Peak repetitive reverse surge Current (Note 1)

Maximum instantaneous forward voltage (Note 2)

I_F=15A, T_J=25℃

0.75

0.85

0.95

0.92

1.02

0.98

1.05

I_F=15A, T_J=125℃

V_F

0.60

0.82

0.73

0.65

0.75

I_F=30A, T_J=25℃

1.10

I_F=30A, T_J=125℃

0.5

0.1

Maximum reverse current @ rated VR T_J=25 ℃

T_J=125 ℃

I_R

Voltage rate of change,(Rated V_R)

Typical thermal resistance

10,000

1.4

dV/dt

R_θJC

T_J

V/μs

^OC/W

^OC

Operating junction temperature range

Storage temperature range

- 55 to +150

^OC

T_STG

Note 1: 2.0μs Pulse Width, f=1.0KHz

Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle

Document Number: DS_D1309029

Version: J13

12 3 4

中文翻译

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